Abstract: A piezoelectric actuator includes a piezoelectric body; a first and a second electrode for applying an electric field to the piezoelectric body in order to polarize the piezoelectric body in a first direction at an elevated temperature, at least one of the first and the second electrode including a material whose resistivity decreases with elevation of the temperature; and a third and a fourth electrode for applying an electric field to the piezoelectric body in a second direction across the first direction of the polarization of the piezoelectric body in order to actuate the piezoelectric body.

Abstract: A magnetic head support includes a slider on which a magnetic head is mounted; a suspension that supports the slider; and a pair of piezoelectric actuators that are arranged on sides of the slider other than a side on which the magnetic head is mounted so as to be opposed to each other. The piezoelectric actuators are fixed to the suspension and the slider, and cause the slider to undergo a rotational displacement.

Abstract: A piezoelectric actuator comprises a body of a piezoelectric material, electrode patterns embedded in the body, and a sidewall protective film of a piezoelectric material covering at least a sidewall surface of the body, the sidewall protective film covering the electrode patterns at the sidewall surface of the body.

Abstract: A thin-film piezoelectric device is disclosed that includes a substrate, a piezoelectric pattern disposed on the substrate, the piezoelectric pattern including plural spaced-apart piezoelectric regions, and a pair of electrodes that apply an electric field to the piezoelectric pattern.

Abstract: A magnetic head includes a head element recording and reading data on and from a recording medium, a slider having an air bearing surface facing the recording medium, and having the head element forming surface which the head element being present on, and a piezoelectric device attached above the head element forming surface and the head element, and configured to displace a part of the head forming surface in a direction perpendicular to the air bearing surface.

Abstract: A head slider includes a slider substrate, an actuator provided in an end portion of the slider substrate and equipped with a piezoelectric element, and a magnetic head disposed on a side opposite to the slider substrate with interposition of the actuator. The piezoelectric element has piezoelectric bodies polarized along a first direction connecting the slider substrate and the magnetic head. The piezoelectric element has electrodes which apply an electric field to the piezoelectric bodies along a second direction intersecting the first direction.

Abstract: A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer (54) is set to 120 nm. The termination layer (55) is set to be an excess Zr layer. In other words, as for the composition of the termination layer (55), “Zr/(Zr+Ti)” is set to be larger than 0.5, and in the termination layer (55) Zr is contained more excessively than the morphotropic phase boundary composition.

Abstract: A magnetic disk drive includes a magnetic head, a magnetic disk, an actuator for changing the position of the magnetic head with respect to the magnetic disk, a sensor for detecting vibration of the magnetic head; and a controller for detecting contact between the magnetic head and the magnetic disk on the basis of the detected vibration and for controlling the actuator.

Abstract: According to an aspect of an embodiment, a method for manufacturing a magnetic head support having a piezoelectric device on a metal plate member comprises the steps of: providing a metal plate member; forming a piezoelectric layer of a piezoelectric material on the plate member at an elevated temperature; forming a first electrode layer of an electrical conducting material on the piezoelectric layer; and bending the metal plate member at a bending portion adjacent to the piezoelectric layer while the temperature is lowered from the elevated temperature after forming the piezoelectric layer.

Abstract: A micro displacement mechanism minutely displaces an object to be driven. The micro displacement mechanism includes a stationary part and an actuator fixed to the stationary part so as to rotatably support the object to be driven. The actuator includes a pair of piezoelectric actuators attached to opposite side surfaces of said object to be driven, respectively. The pair of piezoelectric actuators are arranged at point symmetric positions with respect to a center of gravity of the object to be driven.

Abstract: A piezoelectric actuator comprises a body of a piezoelectric material, electrode patterns embedded in the body, and a sidewall protective film of a piezoelectric material covering at least a sidewall surface of the body, the sidewall protective film covering the electrode patterns at the sidewall surface of the body.

Abstract: A micro displacement mechanism minutely displaces an object to be driven. The micro displacement mechanism includes a stationary part and an actuator fixed to the stationary part so as to rotatably support the object to be driven. The actuator includes a pair of piezoelectric actuators attached to opposite side surfaces of said object to be driven, respectively. The pair of piezoelectric actuators are arranged at point symmetric positions with respect to a center of gravity of the object to be driven.

Abstract: A thin-film piezoelectric device is disclosed that includes a substrate, a piezoelectric pattern disposed on the substrate, the piezoelectric pattern including plural spaced-apart piezoelectric regions, and a pair of electrodes that apply an electric field to the piezoelectric pattern.

Abstract: One surface of a piezoelectric actuator is bonded to a suspension via bonding agents. The piezoelectric actuator is bonded to the suspension at two positions sandwiching a coupling portion therebetween. Namely, the bonding is performed at respective one end portions of two piezoelectric active portions, and these end portions are situated on opposite sides with respect to the coupling portion. In the bonding, since the two piezoelectric active portions are integrated via the coupling portion, relative position adjustment between the piezoelectric active portions is very easy. Further, the number of terminals to connect with a wiring pattern formed on the suspension is only two, and the suspension need not be rotated 180 degrees at the time of bonding, so that the time required for bonding is short.

Abstract: A moving mechanism using a piezoelectric actuator is attached by an adhesive with adhesive parts of a constant area between a piezoelectric element and a slider and between the piezoelectric element and a suspension. A movable part, serving as the slider, is moved by the piezoelectric actuator. A support part, serving as a gimbal part of a suspension, supports the piezoelectric actuator. At least one of the movable part and the support part is fixed to the piezoelectric element. At least one of the piezoelectric element, the movable part and the support part has a bonding surface that is defined by a level difference.

Abstract: A coating film is formed on the whole surface area of a body part. Formation of the coating film may be done by immersing the body part in a solution of parfluoropolyether. Then, the parfluoropolyether constituting the coating film is joined with the side surfaces of the body part by irradiating Xenon excimer laser in a nitrogen atmosphere onto the side faces of the body part, or to the surface exposing an electrode layer. As a result, the protective film is formed only on the side surfaces of the body part. Thus, the protective film is formed as a monomolecular film. Total body part is then cleaned by 2,3-dihydrodecafluoropentane to remove non-reacted coating film, thereby completing a multi-layer piezoelectric element.

Abstract: A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer (54) is set to 120 nm. The termination layer (55) is set to be an excess Zr layer. In other words, as for the composition of the termination layer (55), “Zr/(Zr+Ti)” is set to be larger than 0.5, and in the termination layer (55) Zr is contained more excessively than the morphotropic phase boundary composition.

Abstract: A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.

Abstract: A moving mechanism using a piezoelectric actuator is attached by an adhesive with adhesive parts of a constant area between a piezoelectric element and a slider and between the piezoelectric element and a suspension. A movable part, serving as the slider, is moved by the piezoelectric actuator. A support part, serving as a gimbal part of a suspension, supports the piezoelectric actuator. At least one of the movable part and the support part is fixed to the piezoelectric element. At least one of the piezoelectric element, the movable part and the support part has a bonding surface that is defined by a level difference.

Abstract: A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.