Patents by Inventor Shigeyoshi USAMI

Shigeyoshi USAMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11879184
    Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “?”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first
    Type: Grant
    Filed: June 24, 2022
    Date of Patent: January 23, 2024
    Assignee: PANASONIC HOLDINGS CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Shigeyoshi Usami, Junichi Takino, Masayuki Hoteida, Shunichi Matsuno
  • Patent number: 11859311
    Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1?k*H(Ts)]/[k*H(Ts)?j*H(Tg)]*j*H(Tg)*t (I), y?1.58*10?4*(22.
    Type: Grant
    Filed: June 22, 2022
    Date of Patent: January 2, 2024
    Assignee: PANASONIC HOLDINGS CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Shigeyoshi Usami, Junichi Takino, Shunichi Matsuno
  • Publication number: 20230352599
    Abstract: A source layer is provided on a first p-type layer made of a nitride-based semiconductor, and includes a semiconductor region including electrons as carriers. A drain layer faces the source layer in a first direction on the first p-type layer with a gap being provided therebetween, and includes a semiconductor region including electrons as carriers. A channel structure is provided between the source layer and the drain layer on the first p-type layer, in which a channel region and a gate region are alternately disposed in a second direction perpendicular to the first direction. A channel layer included in the channel structure forms at least a part of the channel region, and is made of a nitride-based semiconductor. A gate layer included in the channel structure forms at least a part of the gate region, and electrically connects a gate electrode and the first p-type layer.
    Type: Application
    Filed: May 13, 2020
    Publication date: November 2, 2023
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hisashi SAITO, Yuki TAKIGUCHI, Shigeyoshi USAMI, Takahiro YAMADA, Marika NAKAMURA, Eiji YAGYU
  • Publication number: 20230143585
    Abstract: A first nitride semiconductor layer and a second nitride semiconductor layer are laminated in a first direction. The first and second nitride semiconductor layers form a heterojunction, and a two-dimensional carrier gas is induced in the first nitride semiconductor layer. A drain electrode is opposite to a source electrode via gate electrode in a third direction. The source electrode and the drain electrode conduct with the first nitride semiconductor layer. The first and second nitride semiconductor layers form a Schottky junction with the gate electrode. A first layer is located between the gate electrode and the drain electrode in the third direction and is in contact with the gate electrode, and is in contact with the second nitride semiconductor layer in a second direction. The first layer suppresses induction of the two-dimensional carrier gas in the first nitride semiconductor layer opposite to the first layer in the first direction.
    Type: Application
    Filed: May 21, 2021
    Publication date: May 11, 2023
    Applicant: Mitsubishi Electric Corporation
    Inventors: Marika NAKAMURA, Shigeyoshi USAMI, Yuki TAKIGUCHI, Takahiro YAMADA, Hisashi SAITO, Tatsuro WATAHIKI, Eiji YAGYU
  • Publication number: 20220411964
    Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1?k*H(Ts)]/[k*H(Ts)?j*H(Tg)]j*H(Tg)*t (I), y?1.58*10?4*(22.
    Type: Application
    Filed: June 22, 2022
    Publication date: December 29, 2022
    Applicant: Panasonic Holdings Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Shigeyoshi USAMI, Junichi TAKINO, Shunichi MATSUNO
  • Publication number: 20220411962
    Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “?”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first
    Type: Application
    Filed: June 24, 2022
    Publication date: December 29, 2022
    Applicant: Panasonic Holdings Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Shigeyoshi USAMI, Junichi TAKINO, Masayuki HOTEIDA, Shunichi MATSUNO
  • Publication number: 20220341056
    Abstract: A group Ill nitride crystal manufacturing apparatus includes a raw material chamber generating a group Ill elemental oxide gas, and a growth chamber allowing the group Ill element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, and the growth chamber incudes a decomposition promoting part promoting decomposition of the unreacted nitrogen element- containing gas between the seed substrate and an exhaust port for discharging the unreacted group Ill oxide gas and the nitrogen element-containing gas.
    Type: Application
    Filed: April 21, 2022
    Publication date: October 27, 2022
    Applicant: Panasonic Holdings Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Shigeyoshi USAMI, Akira KITAMOTO, Junichi TAKINO, Masayuki HOTEIDA, Shunichi MATSUNO
  • Publication number: 20220325437
    Abstract: A method of manufacturing a group III nitride crystal includes: preparing a seed substrate; causing surface roughness on the surface of the seed substrate; and supplying a group III element oxide gas and a nitrogen element-containing gas to grow a group III nitride crystal on the seed substrate.
    Type: Application
    Filed: April 11, 2022
    Publication date: October 13, 2022
    Applicant: Panasonic Holdings Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Shigeyoshi USAMI, Akira KITAMOTO, Junichi TAKINO