Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

Abstract: A substrate is provided having first and second formation areas. An oxide film is formed on both formation areas. An oxidation resistance film is then formed on the oxide film. The second formation area is masked by disposing a photoresist on the oxidation resistance film above the second formation area. The oxidation resistant film is removed from the first formation area and then the photoresist above the second formation area is removed. The oxide film above the first formation area is removed while using the oxidation resistant film above the second formation area as a mask. A first oxide film is formed on the first formation area followed by the removal of the oxidation resistance film above the second formation area. Subsequently, a second oxide film is formed on the second formation area. The first oxide film is designed to have thickness different from the second oxide film.

Abstract: A semiconductor device manufacturing method for forming on a semiconductor first and second oxide films and having different thicknesses comprises the steps of: