Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Abstract: A storage device includes a first electrode, a second electrode, and a resistance change storage layer between the first and second electrodes. The storage layer is either in a first resistance state or in a second resistance state having a resistance higher than the first resistance state and contains at least two elements selected from a group consisting of germanium, antimony, and tellurium. The storage device further includes an interface layer between the first electrode and the resistance change storage layer. The interface layer contains at least one of the elements of the resistance change storage layer and includes a conductive region and an insulating region.

Abstract: A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a nonmagnetic conductor extending in a first direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in the first direction from the first portion to the second portion to surround the nonmagnetic conductor; an insulation portion disposed between the nonmagnetic conductor and the first magnetic member; and a controller electrically connected to the nonmagnetic conductor, the first wiring, and the second wiring.

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

Abstract: To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25<x<0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the Co2Fe(GaxGe1-x) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

Abstract: [Problem to be Solved] To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. [Solution] A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25<x<0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the Co2Fe(GaxGe1-x) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.