Abstract: A multichannel photometric measurement apparatus according to one embodiment includes: a single signal generator for generating an initial signal, the initial signal containing a harmonic component for collectively generating a plurality of modulation signals; a light emitting device including a plurality of light sources that are respectively drivable by each of the plurality of modulation signals having different frequencies; a light detector for detecting a plurality of kinds of light emitted from the light emitting device; and discriminating means for discriminating a detected signal output from the light detector per frequency domain of each of the different frequencies for each of the modulation signals.

Abstract: An infrared analysis apparatus may include a first head and a second head. The first head may include a plurality of light sources each of which irradiates rays of infrared light having different wavelengths on a test object, and an optical element that is disposed between the plurality of light sources and the test object, the optical element making intensity distribution of the infrared light uniform. The second head may include a detector that detects the infrared light transmitted through the test object.

Abstract: A multichannel photometric measurement apparatus according to one embodiment includes: a single signal generator for generating an initial signal, the initial signal containing a harmonic component for collectively generating a plurality of modulation signals; a light emitting device including a plurality of light sources that are respectively drivable by each of the plurality of modulation signals having different frequencies; a light detector for detecting a plurality of kinds of light emitted from the light emitting device; and discriminating means for discriminating a detected signal output from the light detector per frequency domain of each of the different frequencies for each of the modulation signals.

Abstract: A film thickness measuring apparatus of the present invention includes: a light source that emits white light to be irradiated onto a multilayer thin film; a spectroscope that disperses reflected light obtained as a result of irradiating the white light onto the multilayer thin film in order to obtain reflectance spectrums; and a computation section, said computation section including: a setting section that sets a plurality of wavelength ranges for the reflectance spectrums; a first conversion section that obtains wavenumber range reflectance spectrums by re-sequencing, among the reflectance spectrums, reflectance spectrums in the plurality of wavelength ranges set in said setting section at equal intervals, respectively; a second conversion section that converts the wavenumber range reflectance spectrums in the plurality of wavelength ranges obtained in said first conversion section into power spectrums, respectively; and a calculation section that obtains a film thickness of the multilayer thin film based

Abstract: A film thickness measuring apparatus of the present invention includes: a light source that emits white light to be irradiated onto a multilayer thin film; a spectroscope that disperses reflected light obtained as a result of irradiating the white light onto the multilayer thin film in order to obtain reflectance spectrums; and a computation section, said computation section including: a setting section that sets a plurality of wavelength ranges for the reflectance spectrums; a first conversion section that obtains wavenumber range reflectance spectrums by re-sequencing, among the reflectance spectrums, reflectance spectrums in the plurality of wavelength ranges set in said setting section at equal intervals, respectively; a second conversion section that converts the wavenumber range reflectance spectrums in the plurality of wavelength ranges obtained in said first conversion section into power spectrums, respectively; and a calculation section that obtains a film thickness of the multilayer thin film based