Abstract: A system for displaying an image, includes circuitry that: receives a detection of use of a display device by a user; specifies the display device, based on information related to the display device; and displays, on a display, a display device image representing a specific area in an image captured by an image-capturing device, the specific area including at least a part of the display device that is specified.

Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Abstract: A film-forming powder containing a rare earth oxyfluoride has an average particle size D50 of 0.6-15 ?m, a total volume of ?10 ?m pores of 0.51-1.5 cm3/g as measured by mercury porosimetry, and a BET surface area of 3-50 m2/g is suitable for forming a dense film in high yields or deposition rates and high productivity. The film-forming powder having a greater pore volume can be prepared by forming a rare earth ammonium fluoride complex salt on surfaces of rare earth oxide particles to provide precursor particles, and heat treating the precursor particles at a temperature of 350 to 700° C.

Abstract: A photodetector device includes an avalanche photodiode array substrate. A circuit substrate includes time measurement circuits and a clock driver. Each of the time measurement circuit includes a delay line unit, and is arranged to acquire, from an operation result of a delay line, time information indicating timing at which a pulse signal is input from a corresponding avalanche photodiode. The delay line unit is arranged to initiate an operation of the delay line in response to input of the pulse signal to the time measurement circuit, and to stop the operation of the delay line in response to input of a clock signal from a clock driver to the time measurement circuit, and is arranged to detect a time interval shorter than a cycle of the clock signal by the operation of the delay line.

Abstract: In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

Abstract: In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

Abstract: A film-forming powder containing a rare earth oxyfluoride has an average particle size D50 of 0.6-15 ?m, a total volume of 10 ?m pores of 0.51-1.5 cm3/g as measured by mercury porosimetry, and a BET surface area of 3-50 m2/g is suitable for forming a dense film in high yields or deposition rates and high productivity. The film-forming powder having a greater pore volume can be prepared by forming a rare earth ammonium fluoride complex salt on surfaces of rare earth oxide particles to provide precursor particles, and heat treating the precursor particles at a temperature of 350 to 700° C.

Abstract: This thermal spray material including composite particles containing an yttrium oxide and an ammonium yttrium fluoride complex salt is used to form a thermal spray film comprising yttrium oxyfluoride formed by thermal-spraying in the air. When the thermal spray film is formed through thermal-spraying in the air by using the thermal spray material of the present invention, the loss of fluorine from the thermal spraying material during thermal-spraying is reduced, and a thermal spray film containing yttrium oxyfluoride can be formed by controlling a composition, so that a thermal spray film having a desired composition, particularly a desired F/Y, can be easily formed.

Abstract: A film-forming powder containing a rare earth oxyfluoride has an average particle size D50 of 0.6-15 ?m, a total volume of ?10 ?m pores of 0.51-1.5 cm3/g as measured by mercury porosimetry, and a BET surface area of 3-50 m2/g is suitable for forming a dense film in high yields or deposition rates and high productivity. The film-forming powder having a greater pore volume can be prepared by forming a rare earth ammonium fluoride complex salt on surfaces of rare earth oxide particles to provide precursor particles, and heat treating the precursor particles at a temperature of 350 to 700° C.

Abstract: In an optical device, a mirror surface is provided in a movable portion. A support portion supports the movable portion through an elastic connection portion. A force generator generates force in the movable portion. A drive controller outputs a drive signal that operates the force generator. The movable portion has a resonance frequency higher than a frequency of the drive signal output from the drive controller in a state before the elastic connection portion is heated. The movable portion swings due to the elastic deformation of the elastic connection portion in response to the force of the force generator. A heat controller acquires a signal that indicates a swing state of the movable portion and performs, based on a phase of the acquired signal, feedback control of heating of the elastic connection portion by a heater.

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

Abstract: A photodetector device includes an avalanche photodiode array substrate. A circuit substrate includes time measurement circuits and a clock driver. Each of the time measurement circuit includes a delay line unit, and is arranged to acquire, from an operation result of a delay line, time information indicating timing at which a pulse signal is input from a corresponding avalanche photodiode. The delay line unit is arranged to initiate an operation of the delay line in response to input of the pulse signal to the time measurement circuit, and to stop the operation of the delay line in response to input of a clock signal from a clock driver to the time measurement circuit, and is arranged to detect a time interval shorter than a cycle of the clock signal by the operation of the delay line.

Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: Each of a plurality of cells includes at least one avalanche photodiode. A light projecting unit is arranged to project light having a cross-sectional shape whose longitudinal direction corresponds to a first direction. The light projecting unit is arranged to scan the light along a second direction intersecting the first direction such that the reflected light is incident on, among N cell groups each of which includes M cells aligned in a row direction, each cell group or each plurality of cell groups. A controller is arranged to apply, in accordance with the incidence of the reflected light, a bias voltage that makes the avalanche photodiode operate in a Geiger mode to each cell group or each plurality of cell groups, and is arranged to read signals from cells included in the cell group or the plurality of cell groups to which the bias voltage has been applied.

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: A film-forming powder containing a rare earth oxyfluoride has an average particle size D50 of 0.6-15 ?m, a total volume of ?10 ?m pores of 0.51-1.5 cm3/g as measured by mercury porosimetry, and a BET surface area of 3-50 m2/g is suitable for forming a dense film in high yields or deposition rates and high productivity. The film-forming powder having a greater pore volume can be prepared by forming a rare earth ammonium fluoride complex salt on surfaces of rare earth oxide particles to provide precursor particles, and heat treating the precursor particles at a temperature of 350 to 700° C.

Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

Abstract: A readout circuit for reading out an output current from a photoelectric conversion element which collectively outputs currents generated in a plurality of pixels, each of which includes an avalanche photodiode, includes a current mirror circuit configured to receive the output current and output first and second currents having magnitudes in proportion to the output current, a photon counting circuit configured to count the number of photons incident on the photoelectric conversion element on the basis of the first current, an integral circuit configured to integrate the second current to generate a voltage signal, and a signal processing unit configured to determine a magnitude of light incident on the photoelectric conversion element on the basis of a counting result output from the photon counting circuit and a magnitude of the voltage signal output from the integral circuit.