Patents by Inventor Shigeyuki Onizawa

Shigeyuki Onizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming low-carbon CVD film for filling trenches
    Patent number: 8765233
    Abstract: A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: July 1, 2014
    Assignee: ASM Japan K.K.
    Inventors: Atsuki Fukazawa, Hisashi Tazawa, Shigeyuki Onizawa
  • Method of tailoring conformality of Si-containing film
    Patent number: 8669185
    Abstract: A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: March 11, 2014
    Assignee: ASM Japan K.K.
    Inventors: Shigeyuki Onizawa, Woo-Jin Lee, Hideaki Fukuda, Kunitoshi Namba
  • METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM
    Publication number: 20120028469
    Abstract: A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.
    Type: Application
    Filed: July 30, 2010
    Publication date: February 2, 2012
    Applicant: ASM JAPAN K.K.
    Inventors: Shigeyuki Onizawa, Woo-Jin Lee, Hideaki Fukuda, Kunitoshi Namba
  • METHOD FOR FORMING LOW-CARBON CVD FILM FOR FILLING TRENCHES
    Publication number: 20100143609
    Abstract: A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
    Type: Application
    Filed: December 9, 2008
    Publication date: June 10, 2010
    Applicant: ASM JAPAN K.K.
    Inventors: Atsuki Fukazawa, Hisashi Tazawa, Shigeyuki Onizawa