Abstract: A semiconductor wafer manufacturing apparatus includes a susceptor. The susceptor has a plate shape having a first surface and a second surface opposite to the first surface, and is disposed on a cylindrical member of a rotating device in such a manner that the first surface faces a reaction chamber and the second surface faces a hollow chamber surrounded by the cylindrical member and the susceptor. The susceptor has a recessed portion for accommodating a base wafer on the first surface, and the recessed portion has such a size that a gap is provided between a side surface of the recessed portion and the base wafer. The recessed portion has a bottom part and has at least one through hole penetrating through the bottom part.

Abstract: A semiconductor wafer manufacturing apparatus includes a reaction chamber, a reactant gas supply pipe and a reactant gas discharge pipe communicated with the reaction chamber, a rotating device having a cylindrical member, a lid member disposed on one end portion of the cylindrical member, a heating device disposed in a hollow chamber that is a space surrounded by the cylindrical member and the lid member, an inert gas supply pipe and an inert gas discharge pipe communicated with the hollow chamber, and a controller. The controller is configured to adjust an amount of an inert gas discharged from the inert has discharge pipe such that a pressure in the hollow chamber is higher than a pressure in the reaction chamber and equal to or lower than a pressure of a minimum closing portion of the lid member.

Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and on which a base layer is formed is prepared, a trench is provided in the base layer, a silicon carbide layer is epitaxially formed on a surface of the base layer while filling the trench with the silicon carbide layer, the sacrificial layer is planarized by reflow after forming the sacrificial layer, and the silicon carbide layer is etched back together with the planarized sacrificial layer by dry etching under an etching condition in which an etching selectivity of the silicon carbide layer to the sacrificial layer is 1.

Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and on which a base layer is formed is prepared, a trench is provided in the base layer, a silicon carbide layer is epitaxially formed on a surface of the base layer while filling the trench with the silicon carbide layer, the sacrificial layer is planarized by reflow after forming the sacrificial layer, and the silicon carbide layer is etched back together with the planarized sacrificial layer by dry etching under an etching condition in which an etching selectivity of the silicon carbide layer to the sacrificial layer is 1.

Abstract: A gas measuring apparatus includes a cell portion, a light source portion, a detection portion, and a control portion. The cell portion includes a space into which a sample gas containing breath containing a first isotope of carbon dioxide and a second isotope of carbon dioxide is introduced. The light source portion changes a wavelength of the light in a band of 4.345 ?m or more and 4.384 ?m or less. The detection portion performs an operation including first detection of an intensity of the light passing through the space and second detection of an intensity of the light passing through the space into which the sample gas is not introduced. The control portion calculates a ratio of an amount of the second isotope to an amount of the first isotope based on a result of the first detection and a result of the second detection.

Abstract: A breath analyzer includes a light source, a gas cell, a detection unit and a data processing unit. The light source emits infrared light of a wavelength band including an absorption line for acetone. A breath containing sample gas is introduced to the gas cell. The infrared light is incident on the gas cell. The detection unit receives transmitted light emerging from the gas cell, and outputs a sample signal value corresponding to an acetone discharge amount. The data processing unit determines an approximation formula of dependence of fat oxidation rate on acetone discharge amount in advance, and calculates a fat oxidation rate for individual sample signal values using the approximation formula. When the acetone discharge amount (microliter/min) is x, the fat oxidation rate (milligram/min) y is approximated by a following formula: y=Ax+B (where A and B are constants).

Abstract: A gas measuring apparatus includes a cell portion, a light source portion, a detection portion, and a control portion. The cell portion includes a space into which a sample gas containing breath containing a first isotope of carbon dioxide and a second isotope of carbon dioxide is introduced. The light source portion changes a wavelength of the light in a band of 4.345 ?m or more and 4.384 ?m or less. The detection portion performs an operation including first detection of an intensity of the light passing through the space and second detection of an intensity of the light passing through the space into which the sample gas is not introduced. The control portion calculates a ratio of an amount of the second isotope to an amount of the first isotope based on a result of the first detection and a result of the second detection.

Abstract: A breath analyzer includes a light source, a gas cell, a detection unit and a data processing unit. The light source emits infrared light of a wavelength band including an absorption line for acetone. A breath containing sample gas is introduced to the gas cell. The infrared light is incident on the gas cell. The detection unit receives transmitted light emerging from the gas cell, and outputs a sample signal value corresponding to an acetone discharge amount. The data processing unit determines an approximation formula of dependence of fat oxidation rate on acetone discharge amount in advance, and calculates a fat oxidation rate for individual sample signal values using the approximation formula. When the acetone discharge amount (microliter/min) is x, the fat oxidation rate (milligram/min) y is approximated by a following formula: y=Ax+B (where A and B are constants).

Abstract: An electric cylinder includes: an outer cylinder including, on one end side, a fixing section; a rod configured to be capable of expanding and contracting in an axis direction from an opening on the one end side of the outer cylinder; a bearing provided on the other end side end and on the inside of the outer cylinder; a rotating shaft supported by the bearing and driven to rotate; a screw mechanism configured to convert a rotational motion of the rotating shaft into a linear motion of the rod and transmit the linear motion; and a distortion detecting unit provided on the outer circumference of the outer cylinder. The outer cylinder includes at least two or more division members that can be divided and combined. The distortion detecting unit is provided in one division member among the two or more division members.

Abstract: A gas analysis method includes irradiating a sample gas introduced into a gas cell with infrared light tuned to a wavelength corresponding to one absorption line of a target gas contained in the sample gas, measuring a sample signal value corresponding to intensity of transmitted light of the infrared light transmitted through the gas cell, evacuating the sample gas in the gas cell and then replacing by a reference gas, measuring a reference signal value corresponding to intensity of transmitted light of the infrared light transmitted through the reference gas, and calculating gas concentration at the one absorption line from ratio of the sample signal value to the reference signal value.

Abstract: A gas measuring apparatus of an embodiment includes a light source, a gas cell and a detection portion. The light source emits infrared light. Into the gas cell, gas containing 13CO2 and 12CO2 is introduced, and the gas cell includes an incident surface on which the infrared light is incident and an emission surface through which the infrared light is transmitted. The gas cell has a cell length of 2.5 cm or more and 20 cm or less. The detection portion measures a first transmittance of transmitted light from the emission surface at a first wavelength in wavelength range in an absorption line of the 13CO2 and a second transmittance of transmitted light from the emission surface at a second wavelength in the wavelength range in an absorption line of the 12CO2, and is capable of calculating a concentration of each of the 13CO2 and the 12CO2.

Abstract: A gas measuring apparatus includes a cell portion, a light source portion, a detection portion, and a control portion. The cell portion includes a space into which a sample gas containing breath containing a first isotope of carbon dioxide and a second isotope of carbon dioxide is introduced. The light source portion changes a wavelength of the light in a band of 4.345 ?m or more and 4.384 ?m or less. The detection portion performs an operation including first detection of an intensity of the light passing through the space and second detection of an intensity of the light passing through the space into which the sample gas is not introduced. The control portion calculates a ratio of an amount of the second isotope to an amount of the first isotope based on a result of the first detection and a result of the second detection.

Abstract: An exhalation diagnostic devise includes a cell portion, a light source, a detector and a controller. The cell portion includes space into which a sample gas containing first and second substances is introduced. The detector detects an intensity of the light transmitted through the space. The controller, at a time of a first operation, causes the light source to change a wavelength, and calculates a ratio of an amount of the second substance to an amount of the first substance. And the controller, at a time of a second operation performed in one respiration, causes the light source to set the wavelength of the light to a third wavelength, determines whether concentration of at least one of the first substance and the second substance exceeds a set value or not, and starts the first operation when the concentration exceeds the set value.

Abstract: A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 ?m and not more than 18 ?m by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 ?m or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

Abstract: An electric cylinder system includes: an electric cylinder; and a control section that controls the electric cylinder. The electric cylinder includes: an outer cylinder; a rod configured to be capable of extending and retracting in an axis direction from an opening on one end side of the outer cylinder; a bearing provided on the inside of the outer cylinder; a rotating shaft rotatably supported by the bearing and driven to rotate with driving force of a motor; a screw mechanism that converts a rotary motion of the rotating shaft into a linear motion of the rod and transmits the linear motion; and a load detecting section that detects a load in an axis direction applied to the rod in a position where the load is transmitted from the rod through the screw mechanism. The control section controls the electric cylinder on the basis of a signal from an encoder of the motor and a signal from the load detecting section.

Abstract: A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 ?m and not more than 18 ?m by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 ?m or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.