Abstract: A film deposition apparatus includes a film deposition chamber into which a substrate is carried, a heating mechanism that heats the substrate carried into the film deposition chamber, an adhesion accelerating agent feed mechanism that feeds an adhesion accelerating agent gas into the film deposition chamber, and a control part that controls the heating mechanism and the adhesion accelerating agent feed mechanism. When depositing a polyimide film on the substrate by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the control part is configured to control the adhesion accelerating agent feed mechanism to treat a surface of the substrate with the adhesion accelerating agent gas by feeding the adhesion accelerating agent gas into the film deposition chamber until the substrate is heated to a predetermined temperature for depositing the polyimide film.