Abstract: A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.

Abstract: A cleaning system and a cleaning method are provided. The cleaning system includes a main body, an air suctioning device, a light source, an optical sensor, a memory and a processing unit. The air suctioning device includes an air flow passage and a fan-motor assembly that is disposed in the air flow passage and generates a suction force to suction outside air through the air flow passage. The light source emit light to the air flow passage. The optical sensor captures a plurality of successive image frames from the air flow passage. The processing unit is configured to: obtain first and second image frames from the successive image frames; compare the first image frame with the second image frame to identify dust particles; obtain a particle feature of the dust particles; and determine a current cleanness condition according to the particle feature.

Abstract: Systems and methods are provided for predicting systematic design rule check (DRC) violations in a placement layout before routing is performed on the placement layout. A systematic DRC violation prediction system includes DRC violation prediction circuitry. The DRC violation prediction circuitry receives placement data associated with a placement layout. The DRC violation prediction circuitry inspects the placement data associated with the placement layout, and the placement data may include data associated with a plurality of regions of the placement layout, which may be inspected on a region-by-region basis. The DRC violation prediction circuitry predicts whether one or more systematic DRC violations would be present in the placement layout due to a subsequent routing of the placement layout.

Abstract: A package structure includes a package substrate, a package module on the package substrate, a thermal interface material (TIM) layer on the package module, and a package lid on the TIM layer. The package lid includes a package lid foot portion attached to the package substrate, and a package lid plate portion on the package lid foot portion and including a patterned bottom surface having a plurality of recessed portions, wherein at least a portion of the TIM layer is located in the plurality of recessed portions.

Abstract: A method for forming a semiconductor device includes patterning a substrate to form a strip including a first semiconductor material, forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above the isolation region, forming a dummy structure along sidewalls and a top surface of the upper portion of the strip, performing a first etching process on an exposed portion of the upper portion of the strip to form a first recess, the exposed portion of the strip being exposed by the dummy structure, after performing the first etching process, reshaping the first recess to have a V-shaped bottom surface using a second etching process, wherein the second etching process is selective to first crystalline planes having a first orientation relative to second crystalline planes having a second orientation, and epitaxially growing a source/drain region in the reshaped first recess.

Abstract: A connector module capable of transmitting display data signals includes first and second light-emitting devices, a module connector including first and second terminals, and first and second optical transceivers respectively including at least one electrical-optical converting circuit and at least one optical-electrical converting circuit. One of the at least one electrical-optical converting circuit of the first optical transceiver is electrically coupled to the first light-emitting device and the first terminal, and one of the at least one electrical-optical converting circuit of the second optical transceiver is electrically coupled to the second light-emitting device and the second terminal. A portion of the at least one optical-electrical converting circuit of the first optical transceiver is electrically isolated to any optoelectronic device and the module connector.

Abstract: Methods for improving joinder between a surface-mount package and a printed circuit board are disclosed. The warpage at a corner of the surface-mount package and at a corresponding corner of a joint area on the printed circuit board are measured to determine the degree of mismatch. A mini-pad is applied to the corner between the surface-mount package and the joint area on the printed circuit board. The thickness of the mini-pad pushes against the surface-mount package and the printed circuit board, reducing the degree of mismatch below a critical dimension of a ball grid array of the surface-mount package. The surface-mount package can then be soldered to the joint area, reducing or preventing the formation of solder bridges and short circuits.

Abstract: In a method of manufacturing a semiconductor device, a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed, a sacrificial gate structure is formed over the fin structure, a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space, the first semiconductor layers are laterally etched through the source/drain space, and a source/drain epitaxial layer is formed in the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers and at least one of the spacer has width changes along vertical direction of device. At least one of the first semiconductor layers has a composition different from another of the first semiconductor layers.

Abstract: A bridge device includes a first controller and a second controller. The first controller includes a first transmission interface. The second controller includes a second transmission interface. The first transmission interface and the second transmission interface are flash memory interfaces. In a program mode, the first transmission interface receives a first command from the second transmission interface and obtains first transfer data from a bus in response to the first command. A value of the first command is optionally set to a first value or a second value. The first value indicates a memory command transfer operation in a first direction and the second value indicates a memory data transfer operation in the first direction. The first transmission interface processes the first transfer data according to the value of the first command to obtain a memory command or written data.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: A bridge device for bridging a host device and a data storage device includes a first controller and a second controller. The first controller includes a first transmission interface. The second controller is coupled to the first controller and includes a second transmission interface. The second transmission interface is coupled to the first transmission interface through a bus. The first transmission interface operates in a slave mode and the second transmission interface operates in a master mode. The first transmission interface and the second transmission interface generate multiple transfer data chunks in compliance with a common bridge transfer format to perform transfer operations in dual directions for respectively transferring a command and data between a host device and a data storage device.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion for holding an optical element, a fixed portion, a driving assembly used for driving the movable portion to move relative to the fixed portion, and an adhesive element. The movable portion is movable relative to the fixed portion, and the fixed portion includes a case and a bottom affixed on the case. The case has a top wall and a side wall. The top wall is plate-shaped and is perpendicular to a main axis, and the side wall is not parallel to the top wall. An accommodating space for accommodating the movable portion is formed between the case and the bottom. The adhesive element is in direct contact with the bottom, the case, and the driving assembly.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, an active region on the substrate, and a first transistor having a gate structure, a source conductor, and a drain conductor disposed on the active region, wherein the drain conductor and the source conductor are disposed on opposite sides of the gate structure, and the source conductor is shorter than the drain conductor.

Abstract: Various embodiments of the present disclosure are directed towards a two-dimensional carrier gas (2DCG) semiconductor device comprising an ohmic source/drain electrode with a plurality of protrusions separated by gaps and protruding from a bottom surface of the ohmic source/drain electrode. The ohmic source/drain electrode overlies a semiconductor film, and the protrusions extend from the bottom surface into the semiconductor film. Further, the ohmic source/drain electrode is separated from another ohmic source/drain electrode that also overlies the semiconductor film. The semiconductor film comprises a channel layer and a barrier layer that are vertically stacked and directly contact at a heterojunction. The channel layer accommodates a 2DCG that extends along the heterojunction and is ohmically coupled to the ohmic source/drain electrode and the other ohmic source/drain electrode. A gate electrode overlies the semiconductor film between the ohmic source/drain electrode and the other source/drain electrode.

Abstract: In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space. The first semiconductor layers are laterally etched through the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers. A source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. At least one of the first semiconductor layers has a composition which changes along a stacked direction of the first semiconductor layers and second semiconductor layers.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: A CMOS data clearing circuit is provided. The CMOS data clearing circuit is configured to clear CMOS data of a main board of an electronic device. The electronic device includes a control chip and a pin header. The CMOS data clearing circuit includes a controller and a connection port. The controller generates a pulse signal and an operation signal. The connection port has an input pin and an output pin. The output pin is coupled to a first pin of the pin header. The connection port connects the input pin to the output pin in response to the operation signal, so as to transmit the pulse signal to the first pin of the pin header via the output pin. The control chip clears the CMOS data of the main board according to the pulse signal received by the first pin.

Abstract: Various embodiments of the present disclosure are directed towards a two-dimensional carrier gas (2DCG) semiconductor device comprising an ohmic source/drain electrode with a plurality of protrusions separated by gaps and protruding from a bottom surface of the ohmic source/drain electrode. The ohmic source/drain electrode overlies a semiconductor film, and the protrusions extend from the bottom surface into the semiconductor film. Further, the ohmic source/drain electrode is separated from another ohmic source/drain electrode that also overlies the semiconductor film. The semiconductor film comprises a channel layer and a barrier layer that are vertically stacked and directly contact at a heterojunction. The channel layer accommodates a 2DCG that extends along the heterojunction and is ohmically coupled to the ohmic source/drain electrode and the other ohmic source/drain electrode. A gate electrode overlies the semiconductor film between the ohmic source/drain electrode and the other source/drain electrode.

Abstract: A wafer stacking method includes the following steps. A first wafer is provided. A second wafer is bonded to the first wafer to form a first wafer stack structure. A first edge defect inspection is performed on the first wafer stack structure to find a first edge defect and measure a first distance in a radial direction between an edge of the first wafer stack structure and an end of the first edge defect away from the edge of the first wafer stack structure. A first trimming process with a range of a first width is performed from the edge of the first wafer stack structure to remove the first edge defect. Herein, the first width is greater than or equal to the first distance.