Abstract: A method comprises: providing a substrate comprising a first trench; forming an etch stop layer on the substrate; forming a silicon sacrificial region in the first trench; forming a first micromechanical arm array in the silicon sacrificial region; forming a second micromechanical arm array in the silicon sacrificial region; patterning and etching a top portion of each micromechanical arm in the first micromechanical arm array to form a protrusion; forming at least one polysilicon sacrificial layer on the micromechanical arms in the second micromechanical arm array and the micromechanical arms in the second micromechanical arm array, wherein the protrusion of each micromechanical arm in the first micromechanical arm array remains exposed; forming a metal layer; and removing the silicon sacrificial region and the at least one polysilicon sacrificial layer to create a cavity.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A method for handling a display control of a microprocessor in an electronic device includes: receiving a display trigger signal; and controlling a panel device in the electronic device to display a content, in response to the display trigger signal; wherein a central processing unit (CPU) in the electronic device is in a power off state, when controlling the panel device to display the content.

Abstract: A photonic device structure and method of fabricating the same. The structure includes a substrate that has a topside oxide layer and a silicon layer that is formed on the topside oxide layer. The structure further includes a rib waveguide component formed in the silicon layer and that includes contact holes. The contact holes include a contact hole depth, and a contact hole trench that is formed in the silicon layer and which has a first sidewall, a second sidewall, and a bottom surface. The contact hole further includes a contact etch stop layer formed in the contact hole trench.

Abstract: A photonic device structure and method of fabricating the same. The structure includes a substrate that has a first top oxide layer and a silicon layer that is formed on the first top oxide layer. The structure further includes a plurality of rib waveguide components that are formed in the silicon layer. A first rib waveguide component of the plurality includes first contact holes having a first contact hole depth, and a second rib waveguide component of the plurality includes second contact holes having a second contact hole depth, such that the depths of the first contact hole and the second contact hole are different.

Abstract: A photonic device, structure, and fabrication method that includes a substrate having a topside oxide layer formed thereon. The structure also includes a silicon layer that is formed on the topside oxide layer, and one or more waveguide components that are formed in the silicon layer. In addition, the structure includes a reflection device trench structure that is formed in the silicon layer, and which includes a first oblique plane, a bottom plane, and a second oblique plane. The photonic structure also includes a reflection device that is formed adjacent to the first oblique plane, and which has a reflection device angle relative to the bottom plane and configured to direct light into a waveguide component.

Abstract: A deep trench resistor structure and methods of forming the same are described. The structure includes a first trench located in a first dielectric material, a first layer disposed over the first dielectric material, a second layer disposed on the first layer, a second dielectric material disposed over the second layer, and a tunable device in contact with the first layer. The tunable device includes a semiconductor-containing layer in contact with the first layer, a dielectric layer disposed on the semiconductor-containing layer, and a metal-containing layer disposed on the dielectric layer.

Abstract: The present disclosure describes a resistor structure with a dielectric layer, trenches, a metal layer, a semiconductor layer, and an insulating layer. The dielectric layer is disposed above electrical components formed on a substrate. The trenches are disposed in the dielectric layer and separated from each other by a dielectric region of the dielectric layer. The metal layer is disposed on a bottom surface and side surfaces of each of the trenches and on a top surface of the dielectric region. The semiconductor layer is disposed on a bottom surface, side surfaces, and a top surface of the metal layer. The insulating layer is disposed in the trenches and in contact with side surfaces of the semiconductor layer and on a top surface of the semiconductor layer.

Abstract: The present disclosure relates to adaptively overlapping redo writes. A log writer, while operating in a thin mode, may assign a first log writer group of a plurality of log writer groups to write one or more first redo log records to an online redo log in response to determining that a pipelining parameter is satisfied. The thin mode may be associated with one or more target sizes that are less than one or more target sizes associated with a thick mode. The log writer may determine to operate the thick mode based at least in part on at least a portion of the plurality of log writer groups being unavailable to write one or more second redo log records to the online redo log.

Abstract: Various embodiments of the present disclosure are directed to a vertical gate-all-around (GAA) memory cell. A middle conductor overlies a lower conductor and decreases in width towards the lower conductor to culminate in a point spaced from the lower conductor. An insulator structure is between the lower conductor and the middle conductor. A semiconductor channel overlies the middle conductor, and a gate electrode laterally surrounds the semiconductor channel on a sidewall of the semiconductor channel. A gate dielectric layer separates the gate electrode from the semiconductor channel, and an upper conductor overlies the semiconductor channel. The lower and middle conductors and the insulator structure correspond to a resistor, whereas the middle conductor, the upper conductor, the gate electrode, the gate dielectric layer, and the semiconductor channel correspond to a transistor atop the resistor.

Abstract: A fluid assembly includes a base and at least one first device. The base includes a single-piece body including a base outlet, a base inlet, and a first interface including a first interface inlet and a first interface outlet. The base also includes a first flow path segment formed within the single-piece body that extends from the base inlet to the first interface outlet. The base also includes a second flow path segment formed within the single-piece body that extends from first interface inlet. The base also includes a ground path disposed within the single-piece body. The first device is attachable to the first interface to fluidly connect a first device inlet to the first interface outlet and a second device outlet to the second interface inlet.

Abstract: In some examples, a method comprises determining, at an electronic device having a first component of a first component type, a unique identifier associated with the first component. In some examples, in accordance with a determination that the unique identifier does not match the expected identifier of the component of the first component type in the electronic device, determining that the first component associated with the unique identifier satisfies one or more eligibility criteria. In some examples, in accordance with the determination that the first component associated with the unique identifier satisfies the one or more eligibility criteria, authenticating an association of the first component with the electronic device, including updating an installation counter associated with the first component, and updating the expected identifier for the component of the first type based on the unique identifier of the first component.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: A semiconductor device with an image sensor and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a pixel region with a pixel structure, an isolation region with an isolation structure disposed adjacent to the pixel region, and a contact pad region with a pad structure disposed adjacent to the isolation region. The pixel structure includes an epitaxial structure, which includes an embedded portion with a stepped structure disposed in the substrate and a protruding portion extending above a top surface of the substrate. The pixel structure further includes a capping layer disposed on the protruding portion.

Abstract: Some implementations described herein provide an optoelectronic device including a multi-layer photodiode structure having multiple sensing structures formed from one or more quantum effect materials (e.g., formed from multiple layers of quantum effect materials). The multiple sensing structures, which include sidewalls that are in contact with a substrate of the optoelectronic device, may be stacked and include overlapping portions. Through use of the multi-layer photodiode structure including the multiple sensing structures, a quantum length is increased relative to another photodiode structure including a single, planar sensing structure formed from a layer of a quantum effect material.

Abstract: Some implementations described herein provide an optoelectronic device including a multi-layer photodiode structure. The multi-layer photodiode structure includes a stacked configuration of multiple sensing structures formed from quantum effect materials (e.g., a germanium material). By using the stacked configuration of multiple sensing structures, a quantum effect length is increased relative to another photodiode including a single layer photodiode structure. Furthermore, a lower sensing structure of the multi-layer sensing structure shares a substrate with integrated circuitry of the optoelectronic device. The lower sensing structure is electrically isolated from the integrated circuitry by doped isolation regions adjacent to sidewalls of the lower sensing structure.

Abstract: The present disclosure describes a structure with a substrate, a first interconnect region, a second interconnect region, and a memory device region. The first interconnect region is over the substrate and includes first interconnect structures. The second interconnect region is over the first interconnect region and includes second interconnect structures electrically connected to the first interconnect structures. Further, the memory device region is between the first and second interconnect regions and includes memory cells (e.g., ferroelectric random access memory (FeRAM) cells).

Abstract: An electrostatic discharge circuit includes a discharge switch, a first trigger circuit and a second trigger circuit. A first terminal of the discharge switch is coupled to a first power domain, and a second terminal of the discharge switch is coupled to a second power domain. The first trigger circuit is coupled between the first terminal and a control terminal of the discharge switch. The second trigger circuit is coupled between the second terminal and the control terminal. When an electrostatic discharge voltage occurs in the first power domain, the second trigger circuit is configured to form a conduction voltage between the second terminal and the control terminal to turn on the discharge switch. When the electrostatic discharge voltage occurs in the second power domain, the second trigger circuit is configured to short the second terminal and the control terminal to turn on the discharge switch.

Abstract: A semiconductor structure and method for forming the semiconductor are provided. The semiconductor structure includes a logic device, a first contact connected to the logic device, a first power rail over the logic device and connected to the logic device, and a second power rail over the logic device. A transistor having a channel region including indium, gallium, zinc, and oxygen is over the second power rail and connected to the second power rail.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.