Abstract: A silicon photonic platform includes a composite substrate with a first photonic platform layer which includes a photonic platform material. A first signal layer covers the first photonic platform layer, has a top surface, and includes the photonic platform material and a first signal material. A photonic platform spectral signal is different from the first signal material spectral signal. The second photonic platform layer has a top surface, covers at least a portion of the top surface of the first signal, and includes the photonic platform material. The second photonic platform layer includes at least one ridge structure, and forms a silicon photonic platform together with the first photonic platform layer.

Abstract: A photonic integrated circuit structure includes a semiconductor substrate. A waveguide is disposed above the semiconductor substrate and has an inclined plane. A mirror coating layer is conformally disposed on the inclined plane. A cladding layer covers the waveguide and the mirror coating layer. A hole is disposed in the semiconductor substrate or the cladding layer, and the hole overlaps the inclined plane in a vertical direction. In addition, an optical fiber is disposed in the hole to receive a reflected light from the mirror coating layer.

Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

Abstract: A packaged chip and a backlight module including the same are provided. The packaged chip includes a base material, a chip, and a packaging layer. The base material includes a first electrode. The chip is disposed on the base material and is electrically connected with the first electrode. The packaging layer is disposed on the base material and surrounds the chip. The base material includes a surface. A first distance is between a top surface of the chip and the surface of the base material. The surface of the base material includes a coupling portion. In a cross-sectional direction, a height or a depth of the coupling portion is less than the first distance.

Abstract: A light source assembly is provided, including a substrate; a light-emitting element disposed on the substrate; and an optical film disposed on the light-emitting element. A diffuser layer is disposed between the optical film and the light-emitting element, wherein a haze of the diffuser layer is greater than 85%, a distance between the diffuser layer and the light-emitting element is in a range from 0 mm to 10 mm, and a thickness of the light-emitting element is less than the distance.

Abstract: A light source assembly is provided, including a substrate; a light-emitting element disposed on the substrate; and an optical film at least partially overlapped with the substrate. A diffuser film is at least partially overlapped with the optical film, wherein a haze of the diffuser film is greater than 85%, and a thickness of the diffuser film ranges from 0.04 mm to 0.35 mm. The optical film and the diffuser film are capable of transmitting at least a part of light emitted from the light-emitting element.

Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

Abstract: An electronic device is provided. The electronic device includes a driving substrate, a plurality of light-emitting units, and a protective layer. The light-emitting units are electrically connected to the driving substrate. The protective layer covers the light-emitting units, and the protective layer has a Young's modulus less than or equal to 20 MPa.

Abstract: A light source assembly is provided, including a substrate; a light-emitting element disposed on the substrate; and an optical film at least partially overlapped with the substrate. A diffuser film is at least partially overlapped with the optical film, wherein a haze of the diffuser film is greater than 85%, and a thickness of the diffuser film ranges from 0.04 mm to 0.35 mm. The optical film and the diffuser film are capable of transmitting at least a part of light emitted from the light-emitting element.

Abstract: A display device is provided, including a display panel; a light-emitting element disposed under the display panel; an optical functional film disposed between the display panel and the light-emitting element. The optical functional film is capable of transmitting at least part of the light emitted from the light-emitting element. A diffuser film is disposed between the display panel and the light-emitting element. The haze of the diffuser film is greater than 85%, and the thickness of the diffuser film ranges from 0.1 mm to 0.3 mm.

Abstract: A system and method use a physical unclonable function in a PUF circuit on an integrated circuit to generate a security key, and stabilize the security key by storage in a set of nonvolatile memory cells. The stabilized security key is moved from the set of nonvolatile memory cells to a cache memory, and utilized as stored in the cache memory in a security protocol. Also, data transfer from the PUF circuit to the set of nonvolatile memory cells can be disabled after using the PUF circuit to produce the security key, at a safe time, such as after the security key has been moved from the set of nonvolatile memory cells to the cache memory.

Abstract: A semiconductor composite structure includes an electrically conductive bump, and a patterned bonding layer. The electrically conductive bump includes a body portion for being electrically connected to a metal layer of a semiconductor substrate, and a contact portion disposed on the body portion opposite to the metal layer. The patterned bonding layer is disposed on the contact portion opposite to the body portion, and includes an electrically conductive portion and a recess portion depressed relative to the electrically conductive portion. An etching selectivity ratio of the conductive portion relative to the contact portion is greater than 1. A method for making the semiconductor composite structure and a semiconductor device are also disclosed.

Abstract: An electronic device is provided. The electronic device includes a driving substrate, a plurality of light-emitting units, and a protective layer. The light-emitting units are electrically connected to the driving substrate. The protective layer covers the light-emitting units, and the protective layer has a Young's modulus less than or equal to 20 MPa.

Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells store data having at least 2 bits at least corresponding to a first page and a second page. The method includes the following steps. At least one programming pulse is provided. At least one first program-verify pulse is provided. A program-fail-reference signal is enabled. At least one second program-verify pulse is provided after enabling the program-fail-reference signal.

Abstract: A display device is provided, including a display panel; a light-emitting element disposed under the display panel; an optical functional film disposed between the display panel and the light-emitting element. The optical functional film is capable of transmitting at least part of the light emitted from the light-emitting element. A diffuser film is disposed between the display panel and the light-emitting element. The haze of the diffuser film is greater than 85%, and the thickness of the diffuser film ranges from 0.1 mm to 0.3 mm.

Abstract: A device which can be implemented on a single packaged integrated circuit or a multichip includes a plurality of non-volatile memory cells, and logic to use a physical unclonable function to produce an initial key and to store the initial key in a set of non-volatile memory cells in the plurality of non-volatile memory cells. The device can include logic to use a random number generator to generate a random number, and logic to combine the initial key and the random number to produce an enhanced key. The physical unclonable function can use entropy derived from non-volatile memory cells in the plurality of non-volatile memory cells to produce the initial key. Logic is described to disable changes to data in the set of non-volatile memory cells, and thereby freeze the key after it is stored in the set.

Abstract: A system and method for utilizing a security key stored in non-volatile memory, and for generating a PUF-based data set on an integrated circuit including non-volatile memory cells, such as flash memory cells, are described. The method includes storing a security key in a particular block in a plurality of blocks of the non-volatile memory array; utilizing, in a security logic circuit coupled to the non-volatile memory array, the security key stored in the particular block in a protocol to enable access via a port by external devices or communication networks to data stored in blocks in the plurality of blocks; and enabling read-only access to the particular block by the security logic for use in the protocol, and preventing access to the particular block via the port.

Abstract: A display device is provided to have an emission spectrum. The emission spectrum is performed in a white image of highest grey level and includes a first sub emission spectrum ranging from 380 nm to 478 nm and a second sub emission spectrum ranging from 479 nm to 780 nm, and the first sub emission spectrum has a maximum peak wavelength greater than or equal to 453 nm. An integral value of the first sub emission spectrum multiplied by a blue light hazard weighting function from 380 nm to 478 nm is defined as a first integration, and an integral value of the second sub emission spectrum multiplied by an eye function from 479 nm to 780 nm is defined as a second integration. A ratio of the first integration to the second integration is in a range from 40% to 65%.

Abstract: A system and method for utilizing a security key stored in non-volatile memory, and for generating a PUF-based data set on an integrated circuit including non-volatile memory cells, such as flash memory cells, are described. The method includes storing a security key in a particular block in a plurality of blocks of the non-volatile memory array; utilizing, in a security logic circuit coupled to the non-volatile memory array, the security key stored in the particular block in a protocol to enable access via a port by external devices or communication networks to data stored in blocks in the plurality of blocks; and enabling read-only access to the particular block by the security logic for use in the protocol, and preventing access to the particular block via the port.

Abstract: A system and method use a physical unclonable function in a PUF circuit on an integrated circuit to generate a security key, and stabilize the security key by storage in a set of nonvolatile memory cells. The stabilized security key is moved from the set of nonvolatile memory cells to a cache memory, and utilized as stored in the cache memory in a security protocol. Also, data transfer from the PUF circuit to the set of nonvolatile memory cells can be disabled after using the PUF circuit to produce the security key, at a safe time, such as after the security key has been moved from the set of nonvolatile memory cells to the cache memory.