Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: A temperature controlling protective device is made of a PPTC material, comprising: a body having two ends, a top surface and a bottom surface, and two ends of the body. Two electrodes made of silver gel respectively cover the two ends of the body. Two protective layers respectively cover the top surface and the bottom surface. The protective device may prevent electronic circuits from damage due to over heating.

Abstract: An innovative structure for the chip type thick film resistance is disclosed. It comprises a copper structure electroplated to the conductor portion on an insulation layer, or comprises a copper structure electroplated to the conductor portion beneath a soldering interphase layer, or comprises both. With this structure, the resistance and the thermal resistivity of the product is greatly reduced, and the laser resistance trimming can be easily and precisely executed, also production yield will be satisfactorily improved.

Abstract: A method of forming electrode at the end surface of chip array resistors utilizes the vacuum metallization technology such as sputtering evaporating deposition or ion implanting accompanying a metal mask for forming electrode at the end surfaces of chip array resistors. A blank base can be used instead of a punch-through base which has to be used in conventional technology. The method disclosed in the present invention may greatly increase the productivity of the electrodes, and at the same time, the variation of resistance value of the chip array resistor is minimized and the product quality may be improved.

Abstract: The present invention discloses a resistive circuit. The resistive circuit includes a plurality of resistor networks disposed on a substrate. The resistor networks also includes a plurality of resistive circuit elements. The resistor networks further includes a plurality of termination contacts each connected to one of the resistive circuit elements. Each of the termination contacts is disposed on an edge of the substrate and each of the termination contacts is separated from a next termination contact by an edge trench disposed on the edge of the substrate whereby a distance across the edge trench defining a pitch between the termination contacts.