Patents by Inventor Shih-Chen Lin

Shih-Chen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solar cell substrate with thin film polysilicon
    Patent number: 6692985
    Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.
    Type: Grant
    Filed: June 7, 2002
    Date of Patent: February 17, 2004
    Assignee: Industrial Technology Research Institute
    Inventors: Chorng-Jye Huang, Lee Ching Kuo, Jyi Tyan Yeh, Chien Sheng Huang, Leo C. K. Liau, Shih-Chen Lin, Cheng-Ting Chen, Feng-Cheng Jeng
  • Double-talk detector
    Patent number: 6570986
    Abstract: A communication system includes an echo canceller and double-talk detector. The echo canceller includes an adaptive finite impulse response filter that generates an adaptive filter weight vector. The double talk detector computes a squared norm of the filter weight vector and detects an increase of the squared norm in order to detect double-talk status. Upon detection of double-talk status, operation of the echo canceller is suspended.
    Type: Grant
    Filed: August 30, 1999
    Date of Patent: May 27, 2003
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Rong Wu, Shih-Chen Lin, Po-Cheng Chen, Chun-Hung Kuo
  • Solar cell substrate with thin film polysilicon
    Publication number: 20020185171
    Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.
    Type: Application
    Filed: June 7, 2002
    Publication date: December 12, 2002
    Inventors: Chorng-Jye Huang, Lee-Ching Kuo, Jyi-Tyan Yeh, Chien-Sheng Huang, Leo C.K. Liau, Shih-Chen Lin, Cheng-Ting Chen, Feng-Cheng Jeng