Patents by Inventor Shih-Chen Lin
Shih-Chen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240140782Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: PO CHEN YEH, YI-HSIEN CHANG, FU-CHUN HUANG, CHING-HUI LIN, CHIAHUNG LIU, SHIH-FEN HUANG, CHUN-REN CHENG
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Publication number: 20240138138Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a plurality of capacitors, and a first supporting layer. The plurality of capacitors are disposed on the substrate. Each of the capacitors extends along a first direction. Each of the plurality of capacitors includes a first capacitor electrode, a second capacitor electrode, and a capacitor dielectric separating the first capacitor electrode from the second capacitor electrode. The first supporting layer is disposed on the substrate. The first supporting layer extends along a second direction different from the first direction. The capacitor dielectric includes a first surface and a second surface which are disposed on two opposite sides along the first direction. The second surface is exposed by the first capacitor electrode. The first supporting layer is disposed between the first surface and the second surface of the capacitor dielectric.Type: ApplicationFiled: October 24, 2022Publication date: April 25, 2024Inventors: SHIH-FAN KUAN, WEI-CHEN PAN, YU-TING LIN, HUEI-RU LIN
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Publication number: 20240138139Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a plurality of capacitors, and a first supporting layer. The plurality of capacitors are disposed on the substrate. Each of the capacitors extends along a first direction. Each of the plurality of capacitors includes a first capacitor electrode, a second capacitor electrode, and a capacitor dielectric separating the first capacitor electrode from the second capacitor electrode. The first supporting layer is disposed on the substrate. The first supporting layer extends along a second direction different from the first direction. The capacitor dielectric includes a first surface and a second surface which are disposed on two opposite sides along the first direction. The second surface is exposed by the first capacitor electrode. The first supporting layer is disposed between the first surface and the second surface of the capacitor dielectric.Type: ApplicationFiled: July 17, 2023Publication date: April 25, 2024Inventors: SHIH-FAN KUAN, WEI-CHEN PAN, YU-TING LIN, HUEI-RU LIN
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Patent number: 11948896Abstract: A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure, wherein the first stacked die package structure comprises a plurality of memory dies. The underfill layer is over the first stacked die package structure. the package layer is over the underfill layer, wherein the package layer has a protruding portion that extends below a top surface of the through substrate via structure.Type: GrantFiled: July 26, 2022Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Fu Tsai, Kung-Chen Yeh, I-Ting Huang, Shih-Ting Lin, Szu-Wei Lu
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Patent number: 11940388Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).Type: GrantFiled: March 16, 2018Date of Patent: March 26, 2024Assignee: IXENSOR CO., LTD.Inventors: Yenyu Chen, An Cheng Chang, Tai I Chen, Su Tung Yang, Chih Jung Hsu, Chun Cheng Lin, Min Han Wang, Shih Hao Chiu
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Publication number: 20240096830Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.Type: ApplicationFiled: January 9, 2023Publication date: March 21, 2024Inventors: Yu-Yi Huang, Yu-Hung Lin, Wei-Ming Wang, Chen Chen, Shih-Peng Tai, Kuo-Chung Yee
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Publication number: 20240079767Abstract: An antenna module is provided. The antenna module includes a dielectric substrate, a radio frequency integrated circuit (RFIC) and a first number of first antennas. The radio frequency integrated circuit (RFIC) is disposed on the dielectric substrate, wherein the RFIC comprises a single first antenna port group and second antenna port groups to receive or transmit signals. The first number of first antennas is arranged in a first row on the dielectric substrate, wherein at least two of the first antennas are connected to the first antenna port group of the RFIC.Type: ApplicationFiled: August 24, 2023Publication date: March 7, 2024Inventors: Yen-Ju LIN, Wun-Jian LIN, Shih-Huang YEH, Nai-Chen LIU
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Patent number: 11921325Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.Type: GrantFiled: February 27, 2020Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Yi-Chen Chen, Lee-Chuan Tseng, Shih-Wei Lin
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Publication number: 20240072426Abstract: An antenna and an electronic device including the antenna are provided. The antenna includes a pair of radiators, a pair of feeding elements, first and second feeding ports. The radiators are located beside a geometric origin and separated from each other. The geometric origin is located between the radiators. The feeding elements are located below the pair of radiators and are configured to feed signals to the radiators. The pair of feeding elements includes a first feeding element and a second feeding element that are separated from each other. The first feeding element has a first geometric configuration. The second feeding element has a second geometric configuration that is asymmetric to the first geometric configuration. The first feeding port is electrically connected to the first feeding element. The second feeding port is separated from the first feeding port and electrically connected to the second feeding element.Type: ApplicationFiled: August 22, 2023Publication date: February 29, 2024Inventors: Nai-Chen LIU, Chung-Hsin CHIANG, Wun-Jian LIN, Shih-Huang YEH
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Patent number: 6692985Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.Type: GrantFiled: June 7, 2002Date of Patent: February 17, 2004Assignee: Industrial Technology Research InstituteInventors: Chorng-Jye Huang, Lee Ching Kuo, Jyi Tyan Yeh, Chien Sheng Huang, Leo C. K. Liau, Shih-Chen Lin, Cheng-Ting Chen, Feng-Cheng Jeng
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Patent number: 6570986Abstract: A communication system includes an echo canceller and double-talk detector. The echo canceller includes an adaptive finite impulse response filter that generates an adaptive filter weight vector. The double talk detector computes a squared norm of the filter weight vector and detects an increase of the squared norm in order to detect double-talk status. Upon detection of double-talk status, operation of the echo canceller is suspended.Type: GrantFiled: August 30, 1999Date of Patent: May 27, 2003Assignee: Industrial Technology Research InstituteInventors: Wen-Rong Wu, Shih-Chen Lin, Po-Cheng Chen, Chun-Hung Kuo
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Publication number: 20020185171Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.Type: ApplicationFiled: June 7, 2002Publication date: December 12, 2002Inventors: Chorng-Jye Huang, Lee-Ching Kuo, Jyi-Tyan Yeh, Chien-Sheng Huang, Leo C.K. Liau, Shih-Chen Lin, Cheng-Ting Chen, Feng-Cheng Jeng