Abstract: A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved.

Abstract: A method for bonding two materials uses radio frequency energy to swiftly induce heat in a high permeability material for heating a medium to the bonding temperature of the medium so as to bond the two materials with each other.

Abstract: An exemplary optoelectronic device includes a substrate and an epitaxial structure formed on the optoelectronic device. The epitaxial structure includes an N-type semiconductor layer, a P-type semiconductor layer, a multi-quantum-well layer and an undoped semiconductor layer. The multi-quantum-well layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer. The undoped semiconductor layer is sandwiched between the N-type semiconductor layer and the multi-quantum-well layer. The undoped semiconductor layer is represented by a general formula AlrInsGa1-r-sN, wherein r?0, s?0, and 1?r+s?0. A barrier energy level of the undoped semiconductor layer is larger than a barrier energy level of the multi-quantum-well layer.

Abstract: The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects.

Abstract: A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.

Abstract: A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of AlxInyGa1-x-yN, where 0?x?1 and 0?y?1.

Abstract: A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers.

Abstract: A dual-scale rough structure, in which a plurality of islands are grown on a semiconductor layer by heavily doping a dopant during epitaxy of a semiconductor layer of an optoelectronics device, is provided. A plurality of pin holes are formed on the islands by lowering the epitaxial temperature. The pin holes are distributed over the top and sidewall surfaces of the islands so that the total internal reflection within the optoelectronics device can be significantly reduced so as to enhance the brightness thereof. Compared with traditional technologies, the process method of the present invention has the advantages of producing less pollution, being able to perform easily, reducing manufactured cost, increasing the efficiency of light extraction, and increasing the effective area of the dual-scale emitting surface, which is not a smooth surface, of the structure.

Abstract: A method of removing a substrate structure is described. A plurality of pillars is formed on a substrate by using a photolithography etching process. A group III nitride semiconductor layer is grown on the plurality of pillars. The plurality of pillars is etched to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process.

Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Abstract: A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.

Abstract: A manufacturing method of a semiconductor device comprises the steps of: providing a substrate; forming a plurality of grooves on the substrate by photolithograph etching or laser engraving, wherein the plurality of grooves divides a surface of the substrate into a plurality of mesas and the substrate is a patterned substrate; and growing a semiconductor device (e.g. photo-electronic device or LED) on the patterned substrate. The semiconductor device comprises at least one layer, wherein the layer directly disposed on the patterned substrate is the first layer. The first layer comprises a plurality of separated regions divided by the grooves.

Abstract: A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate.

Abstract: The present invention provides a radiation emitting semiconductor device, which comprises an active layer for emitting radiation, a p-type conductive layer, a transparent conductive layer, and a non-p-type ohmic contact layer. The p-type conductive layer is formed on the active layer. The transparent conductive layer is formed on the p-type conductive layer. The non-p-type ohmic contact layer is disposed between said p-type conductive layer and said transparent conductive layer. The non-p-type ohmic contact layer is configured to reduce the operating voltage of said radiation emitting semiconductor device. In addition, the present invention provides that the non-p-type ohmic contact layer is made of a quaternary alloy of AlxInyGa1-x-yN.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract: A light emitting device of Group III nitride based semiconductor comprises a substrate, an N-type semiconductor layer formed on the substrate, an active layer formed on the N-type semiconductor layer, and a P-type semiconductor layer formed on the quantum well layer. The active layer comprises at least one quantum well layer, at least two barrier layers formed to sandwich the quantum well layer therebetween and at least one stress relieving layer, wherein the stress relieving layer is interposed between the quantum well layer and one of the at least two barrier layers, and the composition of the stress relieving layer, made of Group III nitride based material, is graded along the direction from the quantum well layer to the barrier layers adjacent thereto.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract: A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface and a plurality of convex portions protruding from the first surface. Each convex portion is surrounded by a part of the first surface. The first Group III nitride layer is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer is formed on the first surface, wherein a thickness of the second Group III nitride layer is less than a height of the convex portion. Moreover, the first Group III nitride layer and the second Group III nitride layer are made of a same material.

Abstract: A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface has a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses.

Abstract: A full-color display device is disclosed. The present invention comprises a plurality of pixel units each comprising a base, a plurality of transparent conductive substrates, a plurality of light emitting elements, and a plurality of electrode parts. The base has at least three openings formed thereon, the bottom of each opening is a reflective surface, and each of the transparent conductive substrates individually covers each opening. Each of the light emitting elements is individually disposed on one side of each transparent conductive substrate and held in each opening. Each of the electrode parts is formed on the base and electrically connected to the electrodes of the light emitting elements and the transparent conductive substrates.