Patents by Inventor Shih-Cheng Lin

Shih-Cheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7884029
    Abstract: A solar cell having an improved structure of rear surface includes a p-type doped region, a dense metal layer, a loose metal layer, at least one bus bar opening, and solderable material on or within the bus bar opening. The solderable material contacts with the dense aluminum layer. The improved structure in rear surface increases the light converting efficiency, and provides a good adhesion between copper ribbon and solar cell layer thereby providing cost advantages and reducing the complexity in manufacturing. A solar module and solar system composed of such solar cell are also disclosed.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: February 8, 2011
    Assignee: DelSolar Co., Ltd.
    Inventors: Shih-Cheng Lin, Wei-Chih Chang, Yi-Chin Chou, Chorng-Jye Huang, Pin-Sheng Wang
  • Publication number: 20100212735
    Abstract: This invention discloses a high-efficiency solar cell structure which enables high throughput manufacturing process thereof. The solar cell is accomplished by forming a plurality of first emitter regions in a front surface of a substrate, a plurality of second emitter regions in the front surface, and a plurality of fingers. Each of the fingers is formed over a least a portion of the second emitter region and a portion of the first emitter region. The first emitter regions and the second emitter regions have a depth not less than 0.2 ?m.
    Type: Application
    Filed: January 6, 2010
    Publication date: August 26, 2010
    Inventors: Pin-Sheng Wang, Yi-Chin Chou, Shih-Cheng Lin, Shih-Yu Huang, Chia-Chen Tu
  • Publication number: 20090301555
    Abstract: A solar cell having an improved structure of rear surface includes a p-type doped region, a dense metal layer, a loose metal layer, at least one bus bar opening, and solderable material on or within the bus bar opening. The solderable material contacts with the dense aluminum layer. The improved structure in rear surface increases the light converting efficiency, and provides a good adhesion between copper ribbon and solar cell layer thereby providing cost advantages and reducing the complexity in manufacturing. A solar module and solar system composed of such solar cell are also disclosed.
    Type: Application
    Filed: June 9, 2009
    Publication date: December 10, 2009
    Inventors: Shih-Cheng Lin, Wei-Chih Chang, Yi-Chin Chou, Chorng-Jye Huang, Pin-Sheng Wang
  • Publication number: 20090305457
    Abstract: A solar cell having an improved structure of rear surface includes a p-type doped region, a dense metal layer, a loose metal layer, at least one bus bar opening, and solderable material on or within the bus bar opening. The solderable material contacts with the dense aluminum layer. The improved structure in rear surface increases the light converting efficiency, and provides a good adhesion between copper ribbon and solar cell layer thereby providing cost advantages and reducing the complexity in manufacturing. A solar module and solar system composed of such solar cell are also disclosed.
    Type: Application
    Filed: June 9, 2009
    Publication date: December 10, 2009
    Inventors: Shih-Cheng Lin, Wei-Chih Chang, Yi-Chin Chou, Chorng-Jye Huang, Pin-Sheng Wang
  • Publication number: 20040123802
    Abstract: A method for making p-type transparent conductive films and the corresponding system are disclosed. A laser beam is used as the evaporation source of a target, so that the target containing a group-III element vaporizes and forms a coating on a substrate. At the same time, a gas to be mingled into the coating is made into plasma to increase its activity. The gas contains a group-V element. The particles in the target have reactions with the plasma so that the coating thus formed contain both group-III and group-V elements, with the concentration of the group-V element higher than that of group-III element. This achieves the goal of making a p-type transparent conductive film.
    Type: Application
    Filed: April 9, 2003
    Publication date: July 1, 2004
    Inventors: Chorng-Jye Huang, Shih-Cheng Lin, Cheng-Ting Chen, Lee-Ching Kuo
  • Patent number: 6387275
    Abstract: A pretreatment system and a pretreatment method for recycling exhaust water, for purifying exhaust water to a water quality acceptable to ordinary water-purification equipment, has advantages of small space occupation, low energy consumption, and lower cost. By providing a mixing piping with coarse interior, a series of closed micro continuous stirred tank reactors can be established inside the pipe to form plenty of turbulent regions for thoroughly mixing the chemical and the exhaust water. Flocculent gels that carry pollutants and particles of the exhaust water then can be removed by a filtering unit, for purifying the exhaust water. Also, by providing a modified silt density index, the pollution of a sample water can be clearly scaled and monitored.
    Type: Grant
    Filed: July 26, 2000
    Date of Patent: May 14, 2002
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Chang Chang, Shih-Cheng Lin, Hsing-Fen Tsai
  • Patent number: 6245226
    Abstract: A pretreatment system and a pretreatment method for recycling exhaust water, for purifying exhaust water to a water quality acceptable to ordinary water-purification equipment, has advantages of small space occupation, low energy consumption, and lower cost. By providing a mixing piping with coarse interior, a series of closed micro continuous stirred tank reactors can be established inside the pipe to form plenty of turbulent regions for thoroughly mixing the chemical and the exhaust water. Flocculent gels that carry pollutants and particles of the exhaust water then can be removed by a filtering unit, for purifying the exhaust water. Also, by providing a modified silt density index, the pollution of a sample water can be clearly scaled and monitored.
    Type: Grant
    Filed: July 1, 1999
    Date of Patent: June 12, 2001
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Chang Chang, Shih-Cheng Lin, Hsing-Fen Tsai
  • Patent number: D819632
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: June 5, 2018
    Assignee: QUANTA COMPUTER INC.
    Inventor: Shih-Cheng Lin
  • Patent number: D838714
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: January 22, 2019
    Assignee: QUANTA COMPUTER INC.
    Inventor: Shih-Cheng Lin
  • Patent number: D927469
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: August 10, 2021
    Assignee: QUANTA COMPUTER INC.
    Inventor: Shih-Cheng Lin
  • Patent number: D936646
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: November 23, 2021
    Assignee: QUANTA COMPUTER INC.
    Inventor: Shih-Cheng Lin
  • Patent number: D940129
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: January 4, 2022
    Assignee: QUANTA COMPUTER INC.
    Inventor: Shih-Cheng Lin