Abstract: A copper foil having a matte side with nickel plated thereon in an amount of nickel in the range of 100,000-300,000 ?s/dm2. The plated copper foils have particular utility in Positive Temperature Coefficient (PTC) devices. The plated copper foils have a surface hardness of from 50 to 200, a tensile strength greater than 45 kg/mm2 and a shiny side surface roughness (Rz) not exceeding 2.0 ?m. The surface roughness of the matte side of the copper foil is in the range of 6 to 10 ?m. Copper nodules are present on the matte side of the copper foil between the copper foil and the nickel plating. Methods of producing the copper foil and PTC devices incorporating the copper foil are described.

Abstract: A copper foil having a matte side with nickel plated thereon in an amount of nickel in the range of 100,000-300,000 ?s/dm2. The plated copper foils have particular utility in Positive Temperature Coefficient (PTC) devices. The plated copper foils have a surface hardness of from 50 to 200, a tensile strength greater than 45 kg/mm2 and a shiny side surface roughness (Rz) not exceeding 2.0 ?m. The surface roughness of the matte side of the copper foil is in the range of 6 to 10 ?m. Copper nodules are present on the matte side of the copper foil between the copper foil and the nickel plating. Methods of producing the copper foil and PTC devices incorporating the copper foil are described.

Abstract: A plasma source comprises a vacuum chamber, a plurality of discharge tubes, a plurality of permanent magnets, a plurality of RF antennas, and an RF power distribution circuit. The RF power distribution circuit is electrically coupled to an RF power supply and each of the plurality of RF antennas. The lengths of the transmission paths between each of the plurality of RF antennas and the RF power supply are the same, so that the RF power supply can provide each of discharge tubes with the same RF power.

Abstract: Disclosed is a method for growing a microcrystalline silicon film on a substrate. The method includes the step of disposing the substrate in a chamber, the step of vacuuming the chamber and heating the substrate, the step of introducing reacting gas into the chamber as a precursor and keeping the pressure in the chamber at a predetermined value and the step of using RF energy in the chamber to dissociate the reacting gas to form plasma for growing the microcrystalline silicon film on the substrate. The reacting gas includes SiH4/Ar mixture and H2. The ratio of SiH4/Ar mixture over H2 is 1:1 to 1:20.