Abstract: The present invention discloses a data transmission apparatus having clock gating mechanism. Each of data transmission circuits has a flip-flop depth of N and receives a write clock signal and one of read clock signals to receive and output one of data signals. A write clock gating circuit receives a write clock gating enabling signal to transmit the write clock signal to the data transmission circuits. Each of read clock gating circuits receives one of read clock gating enabling signals to transmit one of the read clock signals. The gating signal transmission circuit has a flip-flop depth of N+M and receives the write and the read clock signals to receive the write clock gating enabling signal and output the read clock gating enabling signals. A largest timing difference among the read clock signals is P clock cycles and M is at least ?P?.

Abstract: Some embodiments relate an integrated circuit (IC) including a first substrate. An interconnect structure is disposed over the first substrate. The interconnect structure includes a plurality of metal features that are stacked over one another. A lowermost metal feature of the plurality of metal features is closest to the first substrate, an uppermost metal feature of the plurality of metal features is furthest from the first substrate, and intermediate metal features are disposed between the lowermost metal feature and the uppermost metal feature. A recess extends into the interconnect structure and terminates at a bond pad. A lower surface of the bond pad directly contacts an upper surface of the lowermost metal feature.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer a titanium aluminide layer, and a middle layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and the middle layer is disposed between the titanium aluminide layer and the titanium nitride barrier layer. The middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer includes titanium and nitrogen. A concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.

Abstract: A tool, such as a tape measure, including a spring-based retraction system is shown. The spring-based retraction system is driven by a spiral spring, that has a variable preformed stress profile along the length of the spring.

Abstract: A tool, such as a tape measure, including a spring-based retraction system is shown. The spring-based retraction system is driven by a spiral spring, that has a variable preformed stress profile along the length of the spring.

Abstract: A tool, such as a tape measure, including a spring-based retraction system is shown. The spring-based retraction system is driven by a spiral spring, that has a variable preformed stress profile along the length of the spring.

Abstract: A tool, such as a tape measure, including a spring-based retraction system is shown. The spring-based retraction system is driven by a spiral spring, that has a variable preformed stress profile along the length of the spring.

Abstract: A tool, such as a tape measure, including a spring-based retraction system is shown. The spring-based retraction system is driven by a spiral spring, that has a variable preformed stress profile along the length of the spring.