Abstract: This invention discloses an injection molding machine and a heat-insulating structure of a barrel thereof. The heat-insulating structure covers the barrel of the injection molding machine. The heat-insulating structure includes a plurality of heat-insulating units and a plurality of heat-resistant interlinings. The heat-insulating units are disposed on an outer surface of the barrel in turn along an axial direction of the barrel. The heat-resistant interlinings are located between the heat-insulating units and connect the heat-insulating units, respectively. Each heat-insulating unit includes a heat-resistant layer, a heat-insulating material layer, and an insulating layer in turn. The heat-resistant layer covers the outer surface of the barrel of the injection molding machine.

Abstract: This invention discloses an injection molding machine and a heat-insulating structure of a barrel thereof. The heat-insulating structure covers the barrel of the injection molding machine. The heat-insulating structure includes a plurality of heat-insulating units and a plurality of heat-resistant interlinings. The heat-insulating units are disposed on an outer surface of the barrel in turn along an axial direction of the barrel. The heat-resistant interlinings are located between the heat-insulating units and connect the heat-insulating units, respectively. Each heat-insulating unit includes a heat-resistant layer, a heat-insulating material layer, and an insulating layer in turn. The heat-resistant layer covers the outer surface of the barrel of the injection molding machine.

Abstract: This present invention provides methods for isolating interconnects characterized by first isolating the top and bottom interconnects with an IMD consisting of a traditional low-k dielectric material, then dissolving the low-k material with a suitable solvent and using air or a noble gas instead of the traditional low-k dielectric material to isolate the interconnects.

Abstract: The present invention discloses a method of forming a crown capacitor for a DRAM cell. An etching method having different selectivity between the BPSG and silicon oxynitride layer is applied to form a sacrificial structure with a concanovenex sidewall. Using the sacrificial structure as a mold, a high capacitance crown capacitor is obtained.

Abstract: A method for fabricating a DRAM capacitor is described. First, a semiconductor substrate having a capacitor contact is provided. Next, a first polysilicon layer is formed. Then, an oxide layer and a silicon oxy-nitride layer are sequentially formed over the first polysilicon layer. Next, the silicon oxy-nitride layer, the oxide layer, and the first polysilicon layer are selectively etched to leave a rectangular stack layer. Afterwards, the oxide layer and the first polysilicon layer of the rectangular stack layer are etched from the sidewall direction to leave a double T-shaped stack layer. Then, second polysilicon layer is formed on the upper surface and the sidewall of the double T-shaped stack layer. Next, the second polysilicon layer is selectively removed. The remaining second and first polysilicon layer are used as the bottom electrode. Afterwards, a dielectric layer and an upper electrode are formed on the bottom electrode.