Abstract: Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.

Abstract: A method performed by one or more computers for obtaining an optimized algorithm that (i) is functionally equivalent to a target algorithm and (ii) optimizes one or more target properties when executed on a target set of one or more hardware devices. The method includes: initializing a target tensor representing the target algorithm; generating, using a neural network having a plurality of network parameters, a tensor decomposition of the target tensor that parametrizes a candidate algorithm; generating target property values for each of the target properties when executing the candidate algorithm on the target set of hardware devices; determining a benchmarking score for the tensor decomposition based on the target property values of the candidate algorithm; generating a training example from the tensor decomposition and the benchmarking score; and storing, in a training data store, the training example for use in updating the network parameters of the neural network.

Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.

Abstract: An electronic device and a method for detecting abnormal device operation are provided. The method includes: obtaining multiple action events of a movable input device, and each action event including a relative coordinate and a time stamp of the movable input device; generating multiple absolute coordinates based on the relative coordinate of each action event; estimating multiple speed vectors based on the absolute coordinates and the time stamp of each action event; estimating multiple acceleration vectors based on the speed vectors and the time stamp of each action event; and estimating a probability of abnormal operation based on the speed vectors and the acceleration vectors.

Abstract: A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A multi-channel audio playback system includes a front speaker, a wearable speaker, and a signal processor. The front speaker is configured to receive front sound field signals (FS). The wearable speaker is designed to allow a listener to hear environmental sounds and is configured to receive rear sound field signals (RS). The signal processor is configured to divide a multi-channel signal into a front sound field signal group (FSG) and a rear sound field signal group (RSG); mix FSG (RSG) and generate the FS (RS), wherein the number of the FS (RS) is equal to the number of the drivers of the front speaker (wearable speaker); and perform time delay adjustment on FS or RS, so that a difference between times for sound waves emitted by the front speaker and by the wearable speaker to respectively reach ears of the listener is less than a default value.

Abstract: An audio playback system includes a pair of front speakers, a wearable speaker, and a signal processor. The front speaker includes two independent speaker boxes and is configured to receive a front stereo signal. The wearable speaker includes two or more drivers, is adapted to allow a listener to listen to sounds in a peripheral environment, and is configured to receive a surround stereo signal. The signal processor is configured to receive a stereo signal; generate the surround stereo signal by processing the stereo signal with an attenuation function; adjust a delay time of the front stereo signal or the surround stereo signal so that a time difference between the sound waves emitted by the front speakers and the wearable speaker reaching the ears of the listener is less than a default value; output the front stereo signal and the surround stereo signal.

Abstract: A loudspeaker includes a first electrode layer, a second electrode layer arranged opposite to the first electrode layer, a piezoelectric layer between the first electrode layer and the second electrode layer. The first electrode layer is configured for receiving a first driving voltage. The second electrode layer is configured for receiving a second driving voltage. The piezoelectric layer having an outer contour that is smooth. The piezoelectric layer is configured for making sound by generating mechanical vibration according to the first driving voltage and the second driving voltage.

Abstract: The disclosure provides a touch recognition device, including a display device and manufacturing method thereof. The touch recognition device includes a substrate, a thin film transistor layer, a transparent conductive layer, a first metal layer, a piezoelectric material layer and a second metal layer. The transparent conductive layer is disposed on an end of the thin film transistor layer, and the transparent conductive layer includes a plurality of transparent electrodes. The first metal layer is adjacent to the plurality of transparent electrodes. The piezoelectric material layer is disposed on the transparent conductive layer and the first metal layer. The second metal layer is disposed on the piezoelectric material layer to achieve the effect of increasing voltage of signals and power of ultrasound.

Abstract: The disclosure provides a touch recognition device, including a display device and manufacturing method thereof. The touch recognition device includes a substrate, a thin film transistor layer, a transparent conductive layer, a first metal layer, a piezoelectric material layer and a second metal layer. The transparent conductive layer is disposed on an end of the thin film transistor layer, and the transparent conductive layer includes a plurality of transparent electrodes. The first metal layer is adjacent to the plurality of transparent electrodes. The piezoelectric material layer is disposed on the transparent conductive layer and the first metal layer. The second metal layer is disposed on the piezoelectric material layer to achieve the effect of increasing voltage of signals and power of ultrasound.

Abstract: Methods, systems and apparatus, including computer programs encoded on computer storage media, for training a value neural network that is configured to receive an observation characterizing a state of an environment being interacted with by an agent and to process the observation in accordance with parameters of the value neural network to generate a value score. One of the systems performs operations that include training a supervised learning policy neural network; initializing initial values of parameters of a reinforcement learning policy neural network having a same architecture as the supervised learning policy network to the trained values of the parameters of the supervised learning policy neural network; training the reinforcement learning policy neural network on second training data; and training the value neural network to generate a value score for the state of the environment that represents a predicted long-term reward resulting from the environment being in the state.

Abstract: Panel structure includes a substrate, a piezoelectric material layer and a thin film transistor. The piezoelectric material layer is disposed under the substrate, in which the piezoelectric material layer is configured to generate human recognizable sound waves by vibrating at a human audible frequency in a first time interval, and the piezoelectric material layer is configured to generate ultrasonic waves by vibrating at an ultrasonic frequency in a second time interval. The piezoelectric material layer is used for recognizing human fingerprints when it vibrates at the ultrasonic frequency. The thin film transistor is positioned under and electrically connected to the piezoelectric material layer.

Abstract: Panel structure includes a substrate, a piezoelectric material layer and a thin film transistor. The piezoelectric material layer is disposed under the substrate, in which the piezoelectric material layer is configured to generate human recognizable sound waves by vibrating at a human audible frequency in a first time interval, and the piezoelectric material layer is configured to generate ultrasonic waves by vibrating at an ultrasonic frequency in a second time interval. The piezoelectric material layer is used for recognizing human fingerprints when it vibrates at the ultrasonic frequency. The thin film transistor is positioned under and electrically connected to the piezoelectric material layer.

Abstract: An ultrasonic sensing device includes a circuit board, a piezoelectric material layer on the circuit board, a first electrode, and a second electrode on the circuit board. The circuit board is configured to dispose a circuit. The first electrode is formed on a surface of the piezoelectric material layer away from the circuit board. The piezoelectric material layer is between the first electrode and the second electrode; the first electrode has a thickness in a range from 0.005 ?m to 1 ?m.

Abstract: A toner cartridge and a delivery nozzle receiving device, the latter includes a fixture bracket, a closer, and an elastic element. A guiding slot is formed in the fixture bracket along a length direction of the fixture bracket, and one end of the guiding slot is provided with a delivery nozzle receiving opening. The closer is mounted inside the fixture bracket and can move along the guiding slot between a closed location and an opened location. The elastic element is sleeved outside the fixture bracket and pushes the closer towards the closed location, a first end of the elastic element is limited on an end of the fixture bracket close to the delivery nozzle receiving opening, and a second end of the elastic element is connected to an end of the closer away from the delivery nozzle receiving opening.

Abstract: A toner cartridge and a delivery nozzle receiving device, the latter includes a fixture bracket, a closer, and an elastic element. A guiding slot is formed in the fixture bracket along a length direction of the fixture bracket, and one end of the guiding slot is provided with a delivery nozzle receiving opening. The closer is mounted inside the fixture bracket and can move along the guiding slot between a closed location and an opened location. The elastic element is sleeved outside the fixture bracket and pushes the closer towards the closed location, a first end of the elastic element is limited on an end of the fixture bracket close to the delivery nozzle receiving opening, and a second end of the elastic element is connected to an end of the closer away from the delivery nozzle receiving opening.

Abstract: An electronic apparatus, FPS decision method, and non-transitory computer readable storage medium thereof are provided. The electronic apparatus comprises a circuit. The circuit calculates a movement value according to a plurality of first data corresponding to a first frame for display and a plurality of second data corresponding to a second frame for display. The circuit further calculates a target FPS for displaying a plurality of third frames according to the movement value and a number of frame time between the first frame and the second frame.