Abstract: Embodiments of system and methods for managing memory cells are disclosed, where a memory priority map is generated based on at least one testing procedure, and memory cells of a memory device are allocated to at least one application executed in a computing system by the memory priority map and defined allocating regulations. Further, whenever a fresh memory testing procedure is executed, the memory priority map is updated.

Abstract: An ion implanting system includes an ion beam generator, a mass separation device, a holder device and a first detector. The ion beam generator is configured for generating a first ion beam. The mass separation device is configured for isolating a second ion beam comprising required ions from the first ion beam. The holder device is configured for holding a least one substrate. The holder device and the first detector reciprocate relative to the second ion beam along a first direction to make the substrate and the first detector pass across a projection region of the second ion beam, wherein the first detector is configured for obtaining relevant parameters of the second ion beam. The above-mentioned system is able to obtain the relevant parameters of the ion beam during ion implantation so that the system may immediately adjust the fabrication parameters to obtain better effect of ion implantation.

Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Abstract: An electrode structure adapted for high applied voltage is provided, which comprises a conductive plate substrate and a covering layer disposed thereon such that a covering percentage of the covering layer over the conductive plate substrate is more than 50%. Since area of the conductive plate substrate covered by the covering layer is larger than the area exposed, the possibility of arcing is reduced and the breakdown voltage applied to the electrode structure may be increased.

Abstract: An ion implanting system includes an ion beam generator, a mass separation device, a holder device and a first detector. The ion beam generator is configured for generating a first ion beam. The mass separation device is configured for isolating a second ion beam comprising required ions from the first ion beam. The holder device is configured for holding a least one substrate. The holder device and the first detector reciprocate relative to the second ion beam along a first direction to make the substrate and the first detector pass across a projection region of the second ion beam, wherein the first detector is configured for obtaining relevant parameters of the second ion beam. The above-mentioned system is able to obtain the relevant parameters of the ion beam during ion implantation so that the system may immediately adjust the fabrication parameters to obtain better effect of ion implantation.

Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Abstract: An electrode structure adapted for high applied voltage is provided, which comprises a conductive plate substrate and a covering layer disposed thereon such that a covering percentage of the covering layer over the conductive plate substrate is more than 50%. Since area of the conductive plate substrate covered by the covering layer is larger than the area exposed, the possibility of arcing is reduced and the voltage applied to the electrode structure may be increased.

Abstract: An interactive intellectual robotic toy and control method of the same includes a main processor. At least one memory unit connects the main processor for storing motion data and sound data. A control module respectively connects the main processor and a driver module, and the driver module further connects motors. The control module receives the motion data stored in the memory unit under control of the main processor. An audio handling module connects the main processor and a speaker, the audio handling unit receives the sound data stored in the memory unit under control of the main processor. A USB module connects the main processor for renewing the data stored in the memory unit. A RFID module has a reading module connecting the main processor, a first RF antenna connecting the reading module and identification modules, each identification module has a design, a tag with an electronic code corresponding to the design, and a second RF antenna.

Abstract: A polarizing device has a polarizing layer, a first protection layer, a second protection layer, a conductive layer, an insulating layer, an electrode layer and a hardening coating layer. When a user touches a monitor, which is implemented with the polarizing device, by his/her finger, the coordinate of the touch point will be detected by monitoring the interference caused on the equivalently generated electric filed.

Abstract: A polarizing device has a polarizing layer, a first protection layer, a second protection layer, a conductive layer, an insulating layer, an electrode layer and a hardening coating layer. When a user touches a monitor, which is implemented with the polarizing device, by his/her finger, the coordinate of the touch point will be detected by monitoring the interference caused on the equivalently generated electric filed.

Abstract: A polarizing device has a polarizing layer, a first protection layer, a second protection layer, a conductive layer, an insulating layer, an electrode layer and a hardening coating layer. When a user touches a monitor, which is implemented with the polarizing device, by his/her finger, the coordinate of the touch point will be detected by monitoring the interference caused on the equivalently generated electric filed.

Abstract: A polarizing device has a polarizing layer, a first protection layer, a second protection layer, a conductive layer, an insulating layer, an electrode layer and a hardening coating layer. When a user touches a monitor, which is implemented with the polarizing device, by his/her finger, the coordinate of the touch point will be detected by monitoring the interference caused on the equivalently generated electric filed.