Abstract: A semiconductor device includes a single-layered dielectric layer, a conductive line, a conductive via and a conductive pad. The conductive line and the conductive via are disposed in the single-layered dielectric layer. The conductive pad is extended into the single-layered dielectric layer to electrically connected to the conductive line.

Abstract: A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a gold layer is formed on the second type doped semiconductor layer. Next, a silicon substrate is provided, and a wafer bonding process is performed between the silicon substrate and the gold layer. Finally, the epitaxy substrate is removed. As mentioned above, a LED with better reliability and efficiency of light-emitting is fabricated according to the method provided by the present invention. Moreover, the present invention further provides a LED.

Abstract: A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is removed to expose the substrate at a top edge corner portion of the trench. An insulation layer is formed to fill the trench and covering the exposed substrate and the remaining mask layer. The insulation layer over the remaining mask layer is removed to expose the mask layer. The remaining mask layer is removed to expose the substrate. The exposed substrate is implanted with ions to reduce the oxidation rate. As a result, the substrate at the top edge corner portion of the trench covered with the insulation layer has an oxidation rate higher than the exposed substrate. The insulation layer over the surface level of the substrate is then removed to expose the substrate at the top edge corner portion of the trench.

Abstract: A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is removed to expose the substrate at a top edge corner portion of the trench. An insulation layer is formed to fill the trench and covering the exposed substrate and the remaining mask layer. The insulation layer over the remaining mask layer is removed to expose the mask layer. The remaining mask layer is removed to expose the substrate. The exposed substrate is implanted with ions to reduce the oxidation rate. As a result, the substrate at the top edge corner portion of the trench covered with the insulation layer has an oxidation rate higher than the exposed substrate. The insulation layer over the surface level of the substrate is then removed to expose the substrate at the top edge corner portion of the trench.