Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate electrode over the fin; removing lower portions of the dummy gate electrode proximate to the isolation regions, where after removing the lower portions, there is a gap between the isolation regions and a lower surface of the dummy gate electrode facing the isolation regions; filling the gap with a gate fill material; after filling the gap, forming gate spacers along sidewalls of the dummy gate electrode and along sidewalls of the gate fill material; and replacing the dummy gate electrode and the gate fill material with a metal

Abstract: A flyback power converter includes a power transformer, a first lossless voltage conversion circuit, a first low-dropout linear regulator and a secondary side power supply circuit. The first low-dropout linear regulator (LDO) generates a first operation voltage as power supply for being supplied to a sub-operation circuit. The secondary side power supply circuit includes a second lossless voltage conversion circuit and a second LDO. The second LDO generates a second operation voltage. The first operation voltage and the second operation voltage are shunted to a common node. When a first lossless conversion voltage is greater than a first threshold voltage, the second LDO is enabled to generate the second operation voltage to replace the first operation voltage as power supply supplied to the sub-operation circuit; wherein the second lossless conversion voltage is lower than the first lossless switching voltage.

Abstract: A device a includes a substrate, two source/drain (S/D) features over the substrate, and semiconductor layers suspended over the substrate and connecting the two S/D features. The device further includes a dielectric layer disposed between two adjacent layers of the semiconductor layers and an air gap between the dielectric layer and one of the S/D features, where a ratio between a length of the air gap to a thickness of the first dielectric layer is in a range of 0.1 to 1.0.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.

Abstract: Disclosed are electrolytic copper foils, characterized in that: an electrodeposited surface of the electrolytic copper foil has an average surface roughness (Sz) of 3.50 ?m or less; the electrolytic copper foil has a twin grain boundary ratio of 35% or less, or a total grain boundary density of 3.50 ?m?1 or more after heat treatment at 200° C. for 2 hours; the electrolytic copper foil is manufactured by electrodepositing in an electrolytic solution; and the electrolytic solution comprises 0.01 ppm to 25.0 ppm of chloride ion and 0.01 ppm to 75.0 ppm of an additive. Also disclosed are methods of manufacturing the electrolytic copper foils, and articles made therefrom. The articles include negative electrode current collectors of lithium-ion batteries or electrical double-layer capacitors, resin coated coppers, copper clad laminates, flexible copper clad laminates, various types of printed circuit boards, and the like.

Abstract: Disclosed are composites comprising copper foils having at least one smooth surface and an adhesive layer with low Dk and Df properties. Also disclosed are copper clad laminates made by laminating the present composites with flexible or rigid substrates that exhibit heat resistance and good to excellent bonding strength. The PCBs made therefrom exhibit low insertion loss and may be assembled with other components to form various electrical devices utilizing high speed of at least 1 Gps or high frequency signals of at least 1 GHz.

Abstract: Disclosed are surface-treated copper foils having at least one treated surface that exhibit high conductivity and a set of surface properties. Also provided are flexible copper-clad laminates and printed circuits made therefrom. The present printed circuits exhibit low insertion loss and are suitable for use in high speed/high frequency applications.

Abstract: A manufacturing method of copper foil and circuit board assembly for high frequency transmission are provided. Firstly, a raw copper foil having a predetermined surface is produced by an electrolyzing process. Subsequently, a roughened layer including a plurality of copper particles is formed on the predetermined surface by an arsenic-free electrolytic roughening treatment and an arsenic-free electrolytic surface protection treatment. Thereafter, a surface treatment layer is formed on the roughened layer, and the roughened layer is made of a material which includes at least one kind of non-copper metal elements and the concentration of the non-copper metal elements is smaller than 400 ppm. By controlling the concentration of the non-copper elements, the resistance of the copper foil can be reduced.

Abstract: Disclosed are composites comprising copper foils having at least one smooth surface and an adhesive layer with low Dk and Df properties. Also disclosed are copper clad laminates made by laminating the present composites with flexible or rigid substrates that exhibit heat resistance and good to excellent bonding strength. The PCBs made therefrom exhibit low insertion loss and may be assembled with other components to form various electrical devices utilizing high speed of at least 1 Gps or high frequency signals of at least 1 GHz.

Abstract: A manufacturing method of copper foil and circuit board assembly for high frequency transmission are provided. Firstly, a raw copper foil having a predetermined surface is produced by an electrolyzing process. Subsequently, a roughened layer including a plurality of copper particles is formed on the predetermined surface by an arsenic-free electrolytic roughening treatment and an arsenic-free electrolytic surface protection treatment. Thereafter, a surface treatment layer is formed on the roughened layer, and the roughened layer is made of a material which includes at least one kind of non-copper metal elements and the concentration of the non-copper metal elements is smaller than 400 ppm. By controlling the concentration of the non-copper elements, the resistance of the copper foil can be reduced.

Abstract: The present invention provides a collector plate including a porous ultra-thin copper foil made by the method for manufacturing porous ultra-thin copper foil. One of surfaces of the porous ultra-thin copper foil has a plurality of pores and the thickness of the porous ultra-thin copper foil is between 1 and 5 micron.

Abstract: The present invention provides an ultra-thin copper foil structure including a carrier layer, a separation layer, and an ultra-thin copper layer. The carrier layer has a predetermined surface. The separation layer is formed on the predetermined surface of the carrier layer. The ultra-thin copper layer is disposed on the carrier layer through the separation layer. The separation layer includes at least two of nickel, molybdenum, chromium, and their salts.

Abstract: An interrupt management system and a management method thereof are provided. The interrupt management system includes a processor and an interrupt signal expanding controller. The processor receives a plurality of original interrupt signals. The interrupt signal expanding controller includes a decoder and an interrupt vector table. The decoder receives a plurality of expanding interrupt request signals, and decodes the expanding interrupt request signals to generate the original interrupt signals, where number of the expanding interrupt request signals is larger than number of the original interrupt signals. The interrupt vector table stores a plurality of interrupt vectors. The decoder reads one of the interrupt vectors to obtain an accessed interrupt vector according to the expanding interrupt request signals, and the interrupt signal expanding controller transmits the accessed interrupt vector to the processor.

Abstract: A method for manufacturing porous super-thin copper foil includes: forming a separation layer on a predetermined surface of a carrier layer by electroplating; forming an ultra-thin copper layer on the separation layer by electroplating, the ultra-thin copper layer being disposed on the carrier layer through the separation layer; and peeling the carrier layer and the separation layer from the ultra-thin copper layer, such that part of the ultra-thin copper layer is peeled along with the separation layer to form an ultra-thin copper foil having a plurality of pores.

Abstract: A manufacturing method of copper foil and circuit board assembly for high frequency transmission are provided. Firstly, a raw copper foil having a predetermined surface is produced by an electrolyzing process. Subsequently, a roughened layer including a plurality of copper particles is formed on the predetermined surface by an arsenic-free electrolytic roughening treatment and an arsenic-free electrolytic surface protection treatment. Thereafter, a surface treatment layer is formed on the roughened layer, and the roughened layer is made of a material which includes at least one kind of non-copper metal elements and the concentration of the non-copper metal elements is smaller than 400 ppm. By controlling the concentration of the non-copper elements, the resistance of the copper foil can be reduced.

Abstract: A syringe device includes a core member received in the plunger and the core member is fixedly connected to a base member to which a needle cannula is connected. When the plunger is pulled, the base member is pulled into the barrel. Two flexible protrusions extend from the plunger and which expand wide when the plunger is pulled to a desired position. The expanded flexible protrusions limit the plunger from being pushed into the barrel again.