Abstract: The disclosure relates to a compound of Formula (I), which acts as an allosteric inhibitor of epidermal growth factor receptor (EGFR); pharmaceutical compositions comprising the compound; and methods of treating or preventing kinase-mediated disorders, including cancer and other proliferation diseases.

Abstract: A power switch circuit of adaptively limiting a current is provided. The power switch circuit includes a current sensing resistor, a power switch, a charge pump and an adaptive current limiting circuit. A first terminal of the current sensing resistor is coupled to an input voltage. A first terminal of the power switch is connected to a second terminal of the current sensing resistor. A second terminal of the power switch is connected to a first terminal of a capacitor. A second terminal of the capacitor is grounded. An output terminal of the charge pump is connected to a control terminal of the power switch. According to the input voltage, a voltage of the current sensing resistor and a voltage of the capacitor, the adaptive current limiting circuit determines whether to control an operation of the power switch for limiting the current flowing through the power switch.

Abstract: An integrated air valve includes a hollow shell formed with a valve installation space, two air holes respectively an air inlet hole and an exhaust hole communicated to the space, and two support members; two lever members; and two shape memory alloy members. The lever member uses one of the support members as a fulcrum. The lever member includes an actuating end, and an action end capable of closing the air hole. A part of the shape memory alloy members are hung on the actuating ends of the lever members, and capable of driving the lever members based on an energized state. One of the lever members determines conduction of the air inlet hole to achieve air intake, the other lever member determines whether the exhaust hole communicates to an external space to achieve exhaust, and the lever members determine whether the integrated air valve enters air pressure maintenance.

Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Abstract: An integrated air valve includes a hollow shell formed with a valve installation space, two air holes respectively an air inlet hole and an exhaust hole communicated to the space, and two support members; two lever members; and two shape memory alloy members. The lever member uses one of the support members as a fulcrum. The lever member includes an actuating end, and an action end capable of closing the air hole. A part of the shape memory alloy members are hung on the actuating ends of the lever members, and capable of driving the lever members based on an energized state. One of the lever members determines conduction of the air inlet hole to achieve air intake, the other lever member determines whether the exhaust hole communicates to an external space to achieve exhaust, and the lever members determine whether the integrated air valve enters air pressure maintenance.

Abstract: A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.

Abstract: In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.

Abstract: A system and method for chemical mechanical polishing (“CMP”) pad replacement on a CMP processing tool. A platen carrier having two or more platens is positioned within a platen cleaning process module. Each platen includes a CMP pad affixed thereto, and is capable of being independently rotated during operations. When a pad requires replacement, the platen carrier rotates towards a pad tearer tool, which extends and pivots to remove the used pad from the platen as the carrier rotates. A pad tape replacement module is positioned above the CMP tool with pad tape extending from a supply roll to a recycle roll. As the pad tape transits through the module, a backing of the tape is separated and recycled. A pad disposed in the pad tape is then applied to a platen via a pressure roller.

Abstract: One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing a gapfill material, such as titanium nitride (TiN), in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as FinFETs, GAAs, and the like, with a gapfill material without creating a seam. One or more embodiments include selective deposition processes using a carbon (C) layer in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.

Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Abstract: Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides methods which include forming a self-assembled monolayer (SAM) on the metal surface (e.g., titanium nitride (TiN)) of the PMOS, and methods which include forming a silicon-containing layer such as silicon oxide (SiOx) on the TiN surface. These two types of processes significantly reduce or inhibit the subsequent growth of an N-metal layer, such as titanium aluminum carbide (TiAlC), on the TiN surface of the PMOS.

Abstract: One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing titanium nitride (TiN) in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as finFETs, GAAs, and the like, without creating a seam. The methods include selective deposition processes using blocking compounds in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.

Abstract: A system and method for chemical mechanical polishing (“CMP”) pad replacement on a CMP processing tool. A platen carrier having two or more platens is positioned within a platen cleaning process module. Each platen includes a CMP pad affixed thereto, and is capable of being independently rotated during operations. When a pad requires replacement, the platen carrier rotates towards a pad tearer tool, which extends and pivots to remove the used pad from the platen as the carrier rotates. A pad tape replacement module is positioned above the CMP tool with pad tape extending from a supply roll to a recycle roll. As the pad tape transits through the module, a backing of the tape is separated and recycled. A pad disposed in the pad tape is then applied to a platen via a pressure roller.

Abstract: A power switch circuit of adaptively limiting a current is provided. The power switch circuit includes a current sensing resistor, a power switch, a charge pump and an adaptive current limiting circuit. A first terminal of the current sensing resistor is coupled to an input voltage. A first terminal of the power switch is connected to a second terminal of the current sensing resistor. A second terminal of the power switch is connected to a first terminal of a capacitor. A second terminal of the capacitor is grounded. An output terminal of the charge pump is connected to a control terminal of the power switch. According to the input voltage, a voltage of the current sensing resistor and a voltage of the capacitor, the adaptive current limiting circuit determines whether to control an operation of the power switch for limiting the current flowing through the power switch.

Abstract: Described herein are multi-layered windows for use in chemical-mechanical planarization (CMP) systems and CMP processes. The multi-layered windows of the present disclosure include a transparent structural layer and a hydrophilic surfactant applied to at least a portion of at least one surface of the transparent structural layer. Such multi-layered windows may be in the polishing pad, the platen, or both.

Abstract: Described herein are multi-layered windows for use in chemical-mechanical planarization (CMP) systems and CMP processes. The multi-layered windows of the present disclosure include a transparent structural layer and a hydrophilic surfactant applied to at least a portion of at least one surface of the transparent structural layer. Such multi-layered windows may be in the polishing pad, the platen, or both.

Abstract: The present invention relates to a computer-implemented method. The method includes steps of causing a visual programming panel including a timeline editor and a variety of action blocks configured to enable a variety of basic actions correspondingly for a target robot to perform to be displayed in a visualization interface provided by a robot simulator shown on a web browser; at the visual programming panel, operating by a user to group at least two action blocks representing at least two basic actions selected from the variety of basic actions to form an action collection; and generating a program capable of commanding an end effector equipped on the target robot in a work cell to perform according to the action collection in the robot simulator.

Abstract: The present invention relates to a computer-implemented method. The method includes causing a visual programming panel including a timeline editor and a plurality of motion blocks enabling a variety of robotic motions to be displayed in a visualization interface provided by a robot simulator shown on a web browser; selecting from a user, at the visual programming panel, at least one motion block from the plurality of motion blocks and adding the at least one motion block into the timeline editor, via a drag-and-drop, to form a motion configuration; and according to the motion configuration at the visual programming panel, automatically generating a program capable of commanding an end effector equipped on a target robot in a work cell to perform at least one selected robotic motion from the variety of robotic motions in the robot simulator.

Abstract: Reagent cartridges and related systems and methods are disclosed. In accordance with an implementation, an apparatus includes a first flexible container, a second flexible container, and a coupling. The first flexible container has an end and defines a first interior containing reagent. The second flexible container has an end and defines a second interior. The first flexible container is positioned within the second interior. The coupling has a first portion coupled to the end of the first flexible container and a second portion coupled to the end of the second flexible container. The coupling has a reagent port fluidly coupled to the first interior of the first flexible container and a pressure port fluidly coupled to the second interior of the second flexible container.

Abstract: An operation method for a memory device includes: selecting a selected word line from a plurality of word lines; applying a program voltage to the selected word line; and applying a pass voltage to a plurality of adjacent word lines adjacent to the selected word line. The pass voltage includes a first part and a second part. A timing of the first part of the pass voltage is earlier than a timing of the second part of the pass voltage. A voltage of the first part of the pass voltage is higher than a voltage of the second part of the pass voltage.