Patents by Inventor Shih-Chung Hsiao

Shih-Chung Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY
    Publication number: 20240088154
    Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao, Jhih-Bin Chen
  • Boundary design for high-voltage integration on HKMG technology
    Patent number: 11855091
    Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed over the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.
    Type: Grant
    Filed: July 19, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao, Jhih-Bin Chen
  • BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY
    Publication number: 20220352161
    Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed over the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.
    Type: Application
    Filed: July 19, 2022
    Publication date: November 3, 2022
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao, Jhih-Bin Chen
  • Boundary design for high-voltage integration on HKMG technology
    Patent number: 11410999
    Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed over the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: August 9, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao, Jhih-Bin Chen