Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Abstract: A solar cell includes a photovoltaic substrate having a first surface and a second surface and a plurality of bus bar electrode net structures. The bus bar electrode net structures are separately disposed on the first surface, each bus bar electrode net structure includes a bus bar electrode, a plurality of finger electrodes, at least one connecting line electrode and at least one vertical finger electrode. The bus bar electrode is disposed on the first surface. The finger electrodes are separately disposed at two sides of the bus bar electrode. The connecting line electrode is disposed on the first surface. Each connecting line electrode connects with ends of at least two finger electrodes. The vertical finger electrode is disposed on the first surface, and is parallel to the bus bar electrode and disposed between the two ends of the finger electrode to connect with at least two adjacent finger electrodes.