Abstract: A method for manufacturing a semiconductor device structure includes forming a first metallization line and a second metallization line extending along a first direction; forming a first isolation feature and a second isolation feature between the first metallization line and the second metallization line, wherein the first metallization line, the second metallization line, the first isolation feature and the second isolation feature define an aperture; forming a profile modifier within the aperture, wherein the profile modifier comprises a plurality of segments spaced apart from each other, wherein each of the segments are located at corners of the aperture; and forming a contact feature surrounded by the plurality of segments.

Abstract: A semiconductor device structure and method for manufacturing the same are provided. The semiconductor device structure includes a first metallization line, a second metallization line, a first isolation feature, a second isolation feature, a profile modifier, and a contact feature. The first metallization line and the second metallization line extend along a first direction. The first isolation feature and the second isolation feature are disposed between the first metallization line and the second metallization line. The first metallization line, the second metallization line, the first isolation feature and the second isolation feature define an aperture. The profile modifier is disposed within the aperture to modify a profile of the aperture in a plan view. The contact feature is disposed within the aperture.

Abstract: A method for manufacturing a semiconductor device structure includes forming a first metallization line and a second metallization line extending along a first direction; forming a first isolation feature and a second isolation feature between the first metallization line and the second metallization line, wherein the first metallization line, the second metallization line, the first isolation feature and the second isolation feature define an aperture; forming a profile modifier within the aperture, wherein the profile modifier comprises a plurality of segments spaced apart from each other, wherein each of the segments are located at corners of the aperture; and forming a contact feature surrounded by the plurality of segments.

Abstract: A semiconductor device structure and method for manufacturing the same are provided. The semiconductor device structure includes a first metallization line, a second metallization line, a first isolation feature, a second isolation feature, a profile modifier, and a contact feature. The first metallization line and the second metallization line extend along a first direction. The first isolation feature and the second isolation feature are disposed between the first metallization line and the second metallization line. The first metallization line, the second metallization line, the first isolation feature and the second isolation feature define an aperture. The profile modifier is disposed within the aperture to modify a profile of the aperture in a plan view. The contact feature is disposed within the aperture.

Abstract: The present application discloses a method for fabricating the semiconductor device including providing a substrate in a reaction chamber, forming an untreated silicon nitride film on the substrate, and forming a treated silicon nitride film on the untreated silicon nitride film. Forming the untreated silicon nitride film includes the steps of: (a) supplying a first silicon precursor into the reaction chamber, thereby allowing chemical species from the first silicon precursor to be adsorbed on the substrate, and (b) supplying a first nitrogen precursor into the reaction chamber, thereby nitriding the chemical species to deposit resultant silicon nitride. The step (a) and the step (b) are sequentially and repeatedly performed to form the untreated silicon nitride film.

Abstract: The present application discloses a method for fabricating the semiconductor device including providing a substrate in a reaction chamber, forming an untreated silicon nitride film on the substrate, and forming a treated silicon nitride film on the untreated silicon nitride film. Forming the untreated silicon nitride film includes the steps of: (a) supplying a first silicon precursor into the reaction chamber, thereby allowing chemical species from the first silicon precursor to be adsorbed on the substrate, and (b) supplying a first nitrogen precursor into the reaction chamber, thereby nitriding the chemical species to deposit resultant silicon nitride. The step (a) and the step (b) are sequentially and repeatedly performed to form the untreated silicon nitride film.