Patents by Inventor Shih-En Tseng

Shih-En Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9946166
    Abstract: A method to adjust line-width roughness (LWR) in a lithographic apparatus, the method including receiving a value of LWR and/or image log slope (ILS) for each feature of a plurality of different features of a pattern to be imaged, using a patterning device, onto a substrate in a lithographic process, and evaluating a cost function including a lithographic parameter and the values of LWR and/or ILS to determine a value of the lithographic parameter that (i) reduces a bias between the LWR and/or ILS of the different features, or (ii) reduces a difference in the LWR and/or ILS of the different features between different lithographic apparatuses, or (iii) reduces a difference in the LWR and/or ILS of the different features between different patterning devices, or (iv) any combination selected from (i)-(iii).
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: April 17, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventor: Shih-En Tseng
  • Publication number: 20170052455
    Abstract: A method to adjust line-width roughness (LWR) in a lithographic apparatus, the method including receiving a value of LWR and/or image log slope (ILS) for each feature of a plurality of different features of a pattern to be imaged, using a patterning device, onto a substrate in a lithographic process, and evaluating a cost function including a lithographic parameter and the values of LWR and/or ILS to determine a value of the lithographic parameter that (i) reduces a bias between the LWR and/or ILS of the different features, or (ii) reduces a difference in the LWR and/or ILS of the different features between different lithographic apparatuses, or (iii) reduces a difference in the LWR and/or ILS of the different features between different patterning devices, or (iv) any combination selected from (i)-(iii).
    Type: Application
    Filed: April 8, 2015
    Publication date: February 23, 2017
    Applicant: ASML Netherlands B.V.
    Inventor: Shih-En TSENG
  • Publication number: 20050136340
    Abstract: Without changing the initial illumination setting and resist process condition, a method according to one embodiment includes manipulating the design shape by application of additional and non-printable assist features (“sub-resolution assist features” or “SRAF”), such that CD sensitivities of the pattern feature are minimized. The SRAF may comprise chrome dots, or any other design objects of different sizes, shapes, and/or types, which can modulate the intensity and/or phase of the original pattern. to minimize an aberration sensitivity of selected ones of the plurality of pattern features A pattern that was not designed to include SRAF may be modified to include SRAF. In such a method, one or more aspects of the assist features are selected to reduce the aberration-induced image variation for a pattern and its sensitivity to aberrations.
    Type: Application
    Filed: October 26, 2004
    Publication date: June 23, 2005
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Johannes Baselmans, Hugo Cramer, Adtianus Engelen, Jozef Finders, Carsten Kohler, Shih-En Tseng