Abstract: An optical lens includes an optical zone, and the optical zone includes a relax zone, a distance zone, and a defocus zone. The distance zone surrounds the relax zone. The defocus zone surrounds the distance zone and the relax zone. The diopter of the relax zone reduces along a direction from a center of the optical zone to an edge of the optical zone.

Abstract: A semiconductor device including a substrate, a first well, a second well, a gate, a first doped region, and a second doped region. The substrate includes a first conductive type. The first well includes a second conductive type and is formed in the substrate. The second well includes the second conductive type and is formed in the substrate. The gate is formed on the substrate and overlaps the first and the second wells. The first doped region includes the second conductive type. The first doped region is formed in the first well and self-aligned with the gate. The second doped region includes the second conductive type. The second doped region is formed in the second well and self-aligned with the gate. The gate, the first and the second doped regions constitute a transistor.

Abstract: An apparatus and a method for monitoring overlapped objects are disclosed. The monitoring apparatus comprises a projection device and a camera for projecting images to a target plane at different angles and shooting the pictures from the target plane. When an object is placed on the target plane, the pictures present the part of the image overlapping the surface of the object for determining whether there are overlapped objects or not.

Abstract: Devices and methods for DC and SLT (system level test) integration are disclosed. The DC circuit and the SLT circuit are integrated into the same device. Therefore, the DUT (device under testing) can precede the SLT before the FT (final test) when the DUT passes the DC.