Abstract: A method for assembling an LED display includes the steps of: preparing a prefabricated diffuser film containing a light diffusion agent; mounting a plurality of light emitting elements on a substrate, thereby forming a plurality of gaps among the plurality of light emitting elements; filling the plurality of gaps with a black resin to form a planar surface composed of top surfaces of the plurality of light emitting elements and top surfaces of the black resin in the plurality of gaps; applying a transparent resin layer over the planar surface; and affixing the prefabricated diffuser film on the transparent resin layer. The resulting LED display has a plurality of light emitting elements surrounded by a black resin to form a checkered surface, a transparent resin layer affixed to the checkered surface; and a diffuser film affixed to the transparent resin layer by an adhesive.

Abstract: A semiconductor light-emitting device includes a circuit board with a layout layer and a die bonding area. At least one positive endpoint, negative endpoint and function endpoint are disposed on the layout layer. At least one semiconductor light-emitting chip is disposed within the die bonding area, and is electrically coupled to the positive endpoint, the negative endpoint and the function endpoint to facilitate various connection configurations.

Abstract: An illuminating device includes at least one light-emitting source. The light-emitting source includes a substrate; at least one light-emitting chip disposed on the substrate; and at least one constant-current component electrically coupled to the light-emitting chip. The light-emitting chip includes multiple light-emitting units that are electrically coupled in series, in parallel, or in series-parallel; a first-type electrode, disposed on at least one of the light-emitting units, for electrically coupling to a central DC power source; a second-type electrode disposed on at least one light-emitting unit different from the one, on which the first-type electrode is disposed; and a tapped point configured for electrically coupling at least one of the light-emitting units to the constant-current component.

Abstract: A semiconductor light-emitting device includes a circuit board with a layout layer and a die bonding area. At least one positive endpoint, negative endpoint and function endpoint are disposed on the layout layer. At least one semiconductor light-emitting chip is disposed within the die bonding area, and is electrically coupled to the positive endpoint, the negative endpoint and the function endpoint to facilitate various connection configurations.

Abstract: A light emitting package includes a base and one or more LED units coupled to the base. The LED unit includes a plurality of vertically stacked epitaxial structures. Each epitaxial structure includes at least a first doped layer, at least a light emitting layer, and at least a second doped layer. At least one luminescent element is spaced a distance from the one or more LED units.

Abstract: A light emitting diode array comprises a plurality of light emitting diode units connected in series and arranged for forming an array with n rows and m columns. At least one of the numbers m and n of the array is an odd number.

Abstract: This invention provides lenses having a pendant shape profile and their applications and forming methods. In an embodiment, the lenses are used to encapsulate one or more light-emitting diode chips so as to increase the light extraction efficiency.

Abstract: A method for packaging LED chip modules is provided. First, a first sacrificial layer is disposed on a substrate. Afterwards, LED chips are synchronously disposed on the first sacrificial layer before the first sacrificial layer cures. Next, a first material, a second sacrificial layer, and a second material are used to form a support layer on the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are then removed, so that LED chip modules are obtained, wherein each LED chip module has a corresponding support layer. Furthermore, a moving fixture is provided to synchronously remove chips from a wafer and dispose them on the sacrificial layer.

Abstract: A cutting method for wafer-level packaging capable of protecting the contact pad, in which several cavities and precutting lines are formed at the front surface of a cap wafer, and the depth of each precutting line is lesser than the thickness of the cap wafer, followed by the bonding of the cap wafer to the device wafer, which has several devices and several bonding pads disposed on the surface of the device wafer, followed by performing a wafer dicing process, along the precutting lines cutting through the cap wafer, and after removing a portion of the cap wafer that is not bonded to the device wafer, for exposing the bonding pads at the surface of the device wafer, and finally performing a dicing process for forming many packaged dies.

Abstract: A cap wafer with cavities is etched through areas not covered by a patterned photoresist to form a plurality of openings. The cap wafer is bonded to a transparent wafer at the surface having the cavities and is segmented around the cavities to form a plurality of cap structures. The cap structures are hermetically sealed to a device wafer to form hermetic windows over devices and pads located on the device wafer.

Abstract: A cap wafer with patterned film formed thereon is etched through areas not covered by the patterned film to form a plurality of openings. Then, the cap wafer is bonded to a transparent wafer, and the cap wafer around the pattern film is segmented to form a plurality of cap structures. A device wafer with a plurality of devices and a plurality of contact pads electrically connected to the devices is subsequently provided. The cap structures and the device wafer are hermetically sealed to form a plurality of hermetic windows on the devices.

Abstract: A cutting method for wafer-level packaging capable of protecting the contact pad, in which several cavities and precutting lines are formed at the front surface of a cap wafer, and the depth of each precutting line is lesser than the thickness of the cap wafer, followed by the bonding of the cap wafer to the device wafer, which has several devices and several bonding pads disposed on the surface of the device wafer, followed by performing a wafer dicing process, along the precutting lines cutting through the cap wafer, and after removing a portion of the cap wafer that is not bonded to the device wafer, for exposing the bonding pads at the surface of the device wafer, and finally performing a dicing process for forming many packaged dies.

Abstract: A cap wafer with cavities is etched through areas not covered by a patterned photoresist to form a plurality of openings. The cap wafer is bonded to a transparent wafer at the surface having the cavities and is segmented around the cavities to form a plurality of cap structures. The cap structures are hermetically sealed to a device wafer to form hermetic windows over devices and pads located on the device wafer.

Abstract: A cap wafer with patterned film formed thereon is etched through areas not covered by the patterned film to form a plurality of openings. Then, the cap wafer is bonded to a transparent wafer, and the cap wafer around the pattern film is segmented to form a plurality of cap structures. A device wafer with a plurality of devices and a plurality of contact pads electrically connected to the devices is subsequently provided. The cap structures and the device wafer are hermetically sealed to form a plurality of hermetic windows on the devices.

Abstract: A method of fabricating a pressure sensor. An SOI wafer having a single crystalline silicon layer, an insulating layer and a silicon substrate is provided. The single crystalline silicon layer has a pressure sensing device. The silicon substrate and the insulating layer corresponding to the pressure sensing device are removed to form a cavity. A bonding substrate is adhered to the silicon substrate with a bonding layer.

Abstract: A first wafer is provided, and a photosensitive masking-and-bonding pattern is formed on the surface of the first wafer. Then, an etching process using the photosensitive masking-and-bonding pattern as a hard mask is performed to form a wafer pattern on the surface of the first wafer. Finally, the first wafer is bonded to a second wafer with the photosensitive masking-and-bonding pattern.

Abstract: A method of segmenting a wafer. A device wafer is provided, and a medium layer is formed on the upper surface of the device wafer. Then, a carrier wafer is provided, and the medium layer is mounted on the surface of the carrier wafer. Subsequently, a segment process is performed to form a plurality of dies, and meanwhile these dies are mounted on the medium layer. Thereafter, the carrier wafer is departed from the medium layer, the dies are bonded to an extendable film, and the medium layer is removed.

Abstract: A first wafer is provided, and a photosensitive masking-and-bonding pattern is formed on the surface of the first wafer. Then, an etching process using the photosensitive masking-and-bonding pattern as a hard mask is performed to form a wafer pattern on the surface of the first wafer. Finally, the first wafer is bonded to a second wafer with the photosensitive masking-and-bonding pattern.

Abstract: A method of forming a wafer backside interconnecting wire includes forming a mask layer on the back surface, the mask layer including at least an opening corresponding to the bonding pad, performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, removing the mask layer, and forming an interconnecting wire on the back surface.

Abstract: A method of forming a wafer backside interconnecting wire includes forming a mask layer on the back surface, the mask layer including at least an opening corresponding to the bonding pad, performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, removing the mask layer, and forming an interconnecting wire on the back surface.