Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 ?m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

Abstract: A manufacturing method of a redistribution layer is provided. The method includes the following steps. A patterned sacrificial layer is formed on a carrier. An actuate angle is formed between a side wall of the patterned sacrificial layer and the carrier. A first conductive layer is formed. The first conductive layer includes a plurality of first portions formed on the carrier and a plurality of second portions formed on the patterned sacrificial layer. The patterned sacrificial layer and the second portions of the first conductive layer are removed from the carrier. Another manufacturing method of a redistribution layer is also provided.

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: The lighting module includes a light emitter, a hood and a cover. The light emitter is mounted on an end of the hood. The cover is disposed in the hood and has a conic reflecting surface. When the light emitter is lit up, the lights are emitted into the hood and reflected by the conic reflecting surface and then further reflected by the hood to be projected outward.

Abstract: A thermometer circuit configured to estimate a monitored temperature is disclosed. The circuit includes an adjustable resistor presenting a first resistance value that is temperature-independent and a second resistance value that is temperature-dependent, wherein a first current signal is conducted across the resistor when it presents the first resistance value and a second current signal is conducted across the resistor when it presents the second resistance value; a plurality of gated conductors coupled to the resistor; and a control circuit, coupled to the resistor and the plurality of gated conductors, and configured to selectively deactivate at least one of the plurality of gated conductors to compare the first and second current signals to estimate the monitored temperature.

Abstract: A thermally enhanced electronic package comprises a driver chip, an insulator, a flexible carrier, and carbon nanocapsules. The flexible carrier includes a flexible substrate, a wiring layer formed on the substrate, and a resistant overlaying the wiring layer. The driver chip is connected to the wiring layer. The insulator is filled in the gap between the driver chip and the flexible carrier. The carbon nanocapsules are disposed on the driver chip, on the resistant, on the flexible carrier, or in the insulator to enhance heat dissipation of electronic packages.

Abstract: Provided herein is an apparatus, including an imprint template including a dual-imprint pattern, wherein the dual-imprint pattern is characteristic of imprinting a first pattern on the template with a first template and a second pattern on the template with a second template, and wherein the first pattern and the second pattern at least partially overlap to form the dual-imprint pattern.

Abstract: A method of imprint lithography includes imprinting a first pattern with a first template on a first substrate of a lithographic template. A second pattern is imprinted with a second template on the substrate of the lithographic template. The first pattern and the second pattern at least partially overlap, thus forming a third pattern. The third pattern is lithographically formed on a second substrate with the lithographic template. In an embodiment, the first pattern is a concentric line pattern formed by thin film deposition. In an embodiment, the second pattern is a radial line pattern. In an embodiment the first pattern and the second pattern may have line frequency increased.

Abstract: A thermally enhanced electronic package comprises a driver chip, an insulator, a flexible carrier, and carbon nanocapsules. The flexible carrier includes a flexible substrate, a wiring layer formed on the substrate, and a resistant overlaying the wiring layer. The driver chip is connected to the wiring layer. The insulator is filled in the gap between the driver chip and the flexible carrier. The carbon nanocapsules are disposed on the driver chip, on the resistant, on the flexible carrier, or in the insulator to enhance heat dissipation of electronic packages.

Abstract: A thermally enhanced electronic package comprises a driver chip, an insulator, a flexible carrier, and carbon nanocapsules. The flexible carrier includes a flexible substrate, a wiring layer formed on the substrate, and a resistant overlaying the wiring layer. The driver chip is connected to the wiring layer. The insulator is filled in the gap between the driver chip and the flexible carrier. The carbon nanocapsules are disposed on the driver chip, on the resistant, on the flexible carrier, or in the insulator to enhance heat dissipation of electronic packages.