Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate electrode over the fin; removing lower portions of the dummy gate electrode proximate to the isolation regions, where after removing the lower portions, there is a gap between the isolation regions and a lower surface of the dummy gate electrode facing the isolation regions; filling the gap with a gate fill material; after filling the gap, forming gate spacers along sidewalls of the dummy gate electrode and along sidewalls of the gate fill material; and replacing the dummy gate electrode and the gate fill material with a metal

Abstract: A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.

Abstract: A method of inhibiting the growth of Gram-positive bacteria comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is provided. The Gram-positive bacteria comprise methicillin-resistant Staphylococcus aureus. A method of treating sepsis comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is also provided. A method of treating leukemia comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is further provided.

Abstract: A method of inhibiting the growth of Gram-positive bacteria comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is provided. The Gram-positive bacteria comprise methicillin-resistant Staphylococcus aureus. A method of treating sepsis comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is also provided. A method of treating leukemia comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is further provided.