Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.

Abstract: A method for fabricating an integrated circuit structure is provided. The method includes forming an epitaxial stack over a semiconductor substrate, wherein the epitaxial stack comprises a plurality of first epitaxial layers and a plurality of second epitaxial layers alternately arranged over the semiconductor substrate; patterning the epitaxial stack into a first fin and a second fin, wherein from a top view the first fin extends along a first direction, and the second fin has a first fin line extending along the first direction and a second fin line extending along a second direction different from the first direction; forming a first gate structure over a first portion of the first fin; etching a recess in a second portion of the first fin adjacent the first portion of the first fin; and forming a source/drain feature in the recess.

Abstract: The present invention discloses a partially crosslinked hydrogels blended composition with enhanced viscosity and yield stress, which is formed by the polymerization of one or more colloid monomers through crosslinking. The polymerization is initiated by a photoinitiator under irradiation of the light of a specific wavelength, which promotes crosslinking of the one or more colloid monomers. The hydrogels blended composition can be further crosslinked with one or more other colloid monomers through repeated excitation of the photoinitiator. The hydrogels blended composition can be polymerized into a gel upon re-irradiation, and can also be used as a biomaterial for wound repair, three-dimensional cell culture, personal nursing care, health care, medical and pharmaceutical applications.

Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.

Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.

Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.