Patents by Inventor Shih-Hao Tsai

Shih-Hao Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11145604
    Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: October 12, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Hsien Ma, Haw-Chuan Wu, Shih-Hao Tsai, Yu-Chuan Lin
  • Publication number: 20200152583
    Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Hsien MA, Haw-Chuan WU, Shih-Hao TSAI, Yu-Chuan LIN
  • Patent number: 10535613
    Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Hsien Ma, Haw-Chuan Wu, Shih-Hao Tsai, Yu-Chuan Lin
  • Publication number: 20180166395
    Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
    Type: Application
    Filed: February 9, 2018
    Publication date: June 14, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Hsien MA, Haw-Chuan WU, Shih-Hao TSAI, Yu-Chuan LIN
  • Patent number: 9893019
    Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: February 13, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Hsien Ma, Haw-Chuan Wu, Shih-Hao Tsai, Yu-Chuan Lin
  • Publication number: 20170077224
    Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
    Type: Application
    Filed: September 15, 2015
    Publication date: March 16, 2017
    Inventors: Shih-Hsien MA, Haw-Chuan WU, Shih-Hao TSAI, Yu-Chuan LIN
  • Patent number: 7505291
    Abstract: An AC/DC converter includes a rectifier circuit, at least one restraining unit, and a power interruption detection circuit. The rectifier circuit is used for converting an AC (alternating current) to a DC (direct current) power source. The restraining unit is connected to an output terminal of the AC power supply. The restraining unit includes a resistor and a switch connected in parallel. The power interruption detection circuit detects whether an input power cycle is regular. When the input power cycle is interruptive, a signal is generated to change a state of the switch in the restraining unit to make the resistor of the interfere in the circuit to restrain an inrush current in any operational circumstance, such as warm startup or quick startup.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: March 17, 2009
    Assignee: Acbel Polytech Inc.
    Inventors: Jin-Biau Wang, Jacob Teng, Hung-Tao Lee, Kuen-Lung Tsai, Han-Wei Chen, Shih-Hao Tsai, Ming-Yung Peng
  • Publication number: 20070053215
    Abstract: An AC/DC converter includes a rectifier circuit, at least one restraining unit, and a power interruption detection circuit. The rectifier circuit is used for converting an AC (alternating current) to a DC (direct current) power source. The restraining unit is connected to an output terminal of the AC power supply. The restraining unit includes a resistor and a switch connected in parallel. The power interruption detection circuit detects whether an input power cycle is regular. When the input power cycle is interruptive, a signal is generated to change a state of the switch in the restraining unit to make the resistor of the interfere in the circuit to restrain an inrush current in any operational circumstance, such as warm startup or quick startup.
    Type: Application
    Filed: February 17, 2006
    Publication date: March 8, 2007
    Inventors: Jin-Biau Wang, Jacob Teng, Hung-Tao Lee, Kuen-Lung Tsai, Han-Wei Chen, Shih-Hao Tsai, Ming-Yung Peng