Abstract: A network communication system comprises a cloud network and at least one physical machine. The cloud network comprises at least one physical switch. Each the physical machine comprises a plurality of virtual machines and a virtual switch. Each of the virtual machines is connected to the at least one physical switch in the cloud network through the virtual switch. The virtual switch encapsulates a destination machine address of an egress frame sent by the virtual machines, attaches a destination switch address to the egress frame to be forwarded to the at least one physical switch, and receives and analyzes an ingress frame obtained from the at least one physical switch, so as to convert the destination switch address of the ingress frame to the destination machine address, for forwarding the ingress frame to one of the virtual machines.

Abstract: A network communication system comprises a cloud network and at least one physical machine. The cloud network comprises at least one physical switch. Each the physical machine comprises a plurality of virtual machines and a virtual switch. Each of the virtual machines is connected to the at least one physical switch in the cloud network through the virtual switch. The virtual switch encapsulates a destination machine address of an egress frame sent by the virtual machines, attaches a destination switch address to the egress frame to be forwarded to the at least one physical switch, and receives and analyzes an ingress frame obtained from the at least one physical switch, so as to convert the destination switch address of the ingress frame to the destination machine address, for forwarding the ingress frame to one of the virtual machines.

Abstract: A method of fabricating a semiconductor device is illustrated. A substrate having a plurality of trenches is provided. The plurality of trenches include trenches having differing widths. A first layer is formed on the substrate including in the plurality of trenches. Forming the first layer creates an indentation in the first layer in a region overlying a trench (e.g., wide trench). A second layer is formed in the indentation. The first layer is etched while the second layer remains in the indentation. The second layer may protect the region of indentation from further reduction in thickness. In an embodiment, the first layer is polysilicon and the second layer is BARC of photoresist.

Abstract: A method of fabricating a semiconductor device is illustrated. A substrate having a plurality of trenches is provided. The plurality of trenches include trenches having differing widths. A first layer is formed on the substrate including in the plurality of trenches. Forming the first layer creates an indentation in the first layer in a region overlying a trench (e.g., wide trench). A second layer is formed in the indentation. The first layer is etched while the second layer remains in the indentation. The second layer may protect the region of indentation from further reduction in thickness. In an embodiment, the first layer is polysilicon and the second layer is BARC of photoresist.