Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A 3D display system and a 3D display method are provided. The 3D display system includes a 3D display, a memory, and a processor. The processor is coupled to the 3D display and the memory and is configured to execute the following steps. As a first type application program is executed, an image content of the first type application program is captured, and a stereo format image is generated according to the image content of the first type application program. The stereo format image is delivered to a runtime complying with a specific development standard through an application program interface complying with the specific development standard. A display frame processing associated with the 3D display is performed on the stereo format image through the runtime, and a 3D display image content generated by the display frame processing is provided to the 3D display for displaying.

Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Abstract: A semiconductor memory device includes a first word line formed over a first active region. In some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. In some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.

Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).

Abstract: A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.

Abstract: A character recognition method includes the following operations: determining that the image of character to be identified corresponds to a matching character of several registered characters according to several vector distances to be identified between a vector of an image of character to be identified and several vectors of several registered character images of several registered characters, and storing a matching vector distance between the vector of the image of character to be identified and a vector of the matching character by a processor; and storing a data of the matching character according to the image of character to be identified when the matching vector distance is less than a vector distance threshold by the processor.

Abstract: The present disclosure provides a method of manufacturing a photomask. The method includes: forming a multilayer structure on a substrate; forming a capping layer on the multilayer structure, the capping layer including a ruthenium oxide (RuO) layer; forming a light-absorbing structure on the capping layer; forming a hard mask on the light-absorbing structure; etching the light-absorbing structure to form a recess by using the hard mask as an etch mask, wherein the recess exposes a top portion of the capping layer; and performing a treatment to convert the top portion into a ruthenium nitride (RuN) layer.

Abstract: A method for manufacturing a semiconductor structure is provided. The method may include several operations. A substrate is provided, received or formed. A multilayer structure is formed over the substrate, wherein the multilayer structure includes a plurality of silicon layers and a plurality of molybdenum layers alternately arranged with the plurality of silicon layers. A nitride layer and an oxide layer are formed over the multilayer structure, wherein a total thickness of the nitride layer and a topmost silicon layer is substantially equal to a thickness of each of all other silicon layers of the plurality of silicon layers. A patterned layer is formed over the nitride layer. A semiconductor structure thereof is also provided.

Abstract: Some implementations described herein provide techniques and apparatuses for overcoming forces that may deflect an injector nozzle into an interior wall of a thin-film furnace. The implementations include a fixture that is coupled to the injector nozzle. The fixture is configurable to lock to a selected property of the injector nozzle to maintain, between a portion of the injector nozzle and the interior wall, a gap. In this way, the portion of the injector nozzle is prevented from colliding with the interior wall and dislodging particulates that may contaminate semiconductor product fabricated using the thin-film furnace.

Abstract: A mask includes a reflective layer, an absorption layer and an absorption part. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective layer and the absorption layer, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

Abstract: A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

Abstract: A voice prompting method includes steps of: providing a wearable electronic device, obtaining an image and performing an image processing on the image, detecting and identifying a plurality of objects in the image, classifying and judging danger levels of the objects to generate a judgment result, generating a safety warning message corresponding to each of the objects presently having the danger level higher than a specific danger level according to the judgment result, and transforming the safety warning message into a voice form and prompting with the voice form of the safety warning message. Therefore, it can help a user avoid danger and effectively enhance the safety of walking of the user.

Abstract: Masks and methods of forming the same are disclosed. The mask includes a substrate, a phase shift layer, a shading layer and a passivation layer. The phase shift layer is disposed over the substrate. The shading layer is disposed over the phase shift layer. The passivation layer is disposed over and in physical contact with the shading layer.

Abstract: A voice prompting method includes steps of: providing a wearable electronic device, obtaining an image and performing an image processing on the image, detecting and identifying a plurality of objects in the image, classifying and judging danger levels of the objects to generate a judgment result, generating a safety warning message corresponding to each of the objects presently having the danger level higher than a specific danger level according to the judgment result, and transforming the safety warning message into a voice form and prompting with the voice form of the safety warning message. Therefore, it can help a user avoid danger and effectively enhance the safety of walking of the user.

Abstract: A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

Abstract: A phase shift mask (PSM) includes a light transmitting substrate. The PSM further includes a phase shifter over the light transmitting substrate, wherein the phase shifter includes a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion.

Abstract: A mask, a method of forming the same and a method of manufacturing a semiconductor device using the same are disclosed. The mask includes a substrate, a reflective multilayer coating, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer coating is disposed over the substrate. The absorption layer is disposed over the reflective multilayer coating. The absorption part is disposed in the reflective multilayer and the absorption layer in the mask black border region.

Abstract: A mask for reflecting an electromagnetic radiation includes a substrate, a reflective multi-layered stack over a surface of the substrate, a metal capping layer over the reflective multi-layered stack, a metal silicide buffer layer over the metal capping layer, and an optical absorber pattern over the metal silicide buffer layer.

Abstract: A mask, a method of forming the same and a method of manufacturing a semiconductor device using the same are disclosed. The mask includes a substrate, a reflective multilayer coating, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer coating is disposed over the substrate. The absorption layer is disposed over the reflective multilayer coating. The absorption part is disposed in the reflective multilayer and the absorption layer in the mask black border region.