Patents by Inventor Shih-Haur Shen

Shih-Haur Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10589397
    Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: March 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Alain Duboust, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang, Stephen Jew, David H. Mai, Huyen Tran
  • Patent number: 10562148
    Abstract: A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone is generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: February 18, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Shih-Haur Shen, Kun Xu, Tzu-Yu Liu
  • Patent number: 10556315
    Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: February 11, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
  • Publication number: 20190358770
    Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Inventors: Hassan G. Iravani, Kun Xu, Denis Ivanov, Shih-Haur Shen, Boguslaw A. Swedek
  • Patent number: 10427272
    Abstract: A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: October 1, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kun Xu, Kevin Lin, Ingemar Carlsson, Shih-Haur Shen, Tzu-Yu Liu
  • Patent number: 10391610
    Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: August 27, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Hassan G. Iravani, Kun Xu, Denis Ivanov, Shih-Haur Shen, Boguslaw A. Swedek
  • Patent number: 10350723
    Abstract: During polishing of a substrate a first signal is received from a first in-situ monitoring system and a second signal is received from a second in-situ monitoring system. A clearance time at which a conductive layer is cleared and a top surface of an underlying dielectric layer of the substrate exposed and determine based on the first signal. An initial value of the second signal at the determined clearance time is determined. An offset is added to the initial value to generate a threshold value, and a polishing endpoint is triggered when the second signal crosses the threshold value.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: July 16, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Shih-Haur Shen, Jianshe Tang, Jimin Zhang, David Maxwell Gage
  • Publication number: 20190143476
    Abstract: A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.
    Type: Application
    Filed: November 13, 2018
    Publication date: May 16, 2019
    Inventors: Haosheng Wu, Hari Soundararajan, Yen-Chu Yang, Jianshe Tang, Shou-Sung Chang, Shih-Haur Shen, Taketo Sekine
  • Publication number: 20190134775
    Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 9, 2019
    Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
  • Patent number: 10207386
    Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: February 19, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
  • Publication number: 20180304435
    Abstract: A method of polishing a layer on the substrate at a polishing station includes the actions of monitoring the layer during polishing at the polishing station with an in-situ monitoring system to generate a plurality of measured signals for a plurality of different locations on the layer; generating, for each location of the plurality of different locations, an estimated measure of thickness of the location, the generating including processing the plurality of measured signals through a neural network; and at least one of detecting a polishing endpoint or modifying a polishing parameter based on each estimated measure of thickness.
    Type: Application
    Filed: April 13, 2018
    Publication date: October 25, 2018
    Inventors: Kun Xu, Hassan G. Iravani, Denis Ivanov, Boguslaw A. Swedek, Shih-Haur Shen, Harry Q. Lee, Benjamin Cherian
  • Publication number: 20180203089
    Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.
    Type: Application
    Filed: January 10, 2018
    Publication date: July 19, 2018
    Inventors: Kun Xu, Ingemar Carlsson, Shih-Haur Shen, Boguslaw A. Swedek, Tzu-Yu Liu
  • Publication number: 20180203090
    Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.
    Type: Application
    Filed: January 10, 2018
    Publication date: July 19, 2018
    Inventors: Kun Xu, Ingemar Carlsson, Shih-Haur Shen, Boguslaw A. Swedek, Tzu-Yu Liu
  • Publication number: 20180122667
    Abstract: An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core positioned at least partially in the platen and a coil wound around a portion of the core. The core includes a back portion and a multiplicity of posts extending from the back portion in a first direction normal to the surface of the platen. The core and coil are configured such that the multiplicity of posts include a first plurality of posts to provide a first magnetic polarity and a second plurality of posts to provide an opposite second magnetic polarity, and the first plurality of posts and the second plurality of posts are arranged in an alternating pattern.
    Type: Application
    Filed: October 6, 2017
    Publication date: May 3, 2018
    Inventors: Hassan G. Iravani, Boguslaw A. Swedek, Tzu-Yu Liu, Kun Xu, Shih-Haur Shen
  • Publication number: 20180111251
    Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.
    Type: Application
    Filed: October 5, 2017
    Publication date: April 26, 2018
    Inventors: Hassan G. Iravani, Kun Xu, Denis Ivanov, Shih-Haur Shen, Boguslaw A. Swedek
  • Publication number: 20180099374
    Abstract: A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone us generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.
    Type: Application
    Filed: October 6, 2017
    Publication date: April 12, 2018
    Inventors: Shih-Haur Shen, Kun Xu, Tzu-Yu Liu
  • Publication number: 20180079048
    Abstract: During polishing of a substrate a first signal is received from a first in-situ monitoring system and a second signal is received from a second in-situ monitoring system. A clearance time at which a conductive layer is cleared and a top surface of an underlying dielectric layer of the substrate exposed and determine based on the first signal. An initial value of the second signal at the determined clearance time is determined. An offset is added to the initial value to generate a threshold value, and a polishing endpoint is triggered when the second signal crosses the threshold value.
    Type: Application
    Filed: September 13, 2017
    Publication date: March 22, 2018
    Inventors: Shih-Haur Shen, Jianshe Tang, Jimin Zhang, David Maxwell Gage
  • Publication number: 20180079052
    Abstract: A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.
    Type: Application
    Filed: September 20, 2017
    Publication date: March 22, 2018
    Inventors: Kun Xu, Kevin Lin, Ingemar Carlsson, Shih-Haur Shen, Tzu-Yu Liu
  • Publication number: 20170151647
    Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
    Type: Application
    Filed: February 3, 2017
    Publication date: June 1, 2017
    Applicant: Applied Materials, Inc.
    Inventors: Alain Duboust, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang, Stephen Jew, David H. Mai, Huyen Tran
  • Patent number: 9636797
    Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ?T of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ?T to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: May 2, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Kun Xu, Ingemar Carlsson, Boguslaw A. Swedek, Doyle E. Bennett, Shih-Haur Shen, Hassan G Iravani, Wen-Chiang Tu, Tzu-Yu Liu