Patents by Inventor Shih-Hciung Chan

Shih-Hciung Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial system
    Patent number: 6174367
    Abstract: An epitaxial system is provided for performing an epitaxial growth of IIIA-VA compound on the wafer substrate. The epitaxial system includes a first reaction region for providing a plasma of a first reactant, a second reaction region for epitaxially reacting the plasma of the first reactant with a second reactant on a wafer, and a guiding medium disposed between the first reaction region and the second reaction region for passing therethrough the second reactant and the first reactant plasma to the second reaction region.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: January 16, 2001
    Assignee: National Science Council
    Inventors: Chun-Yen Chang, Shih-Hciung Chan, Jian-Shihn Tsang, Jan-Dar Guo, Wei-Chi Lai