Abstract: A film thickness measurement device includes a spectroscopic ellipsometer, and the spectroscopic ellipsometer includes a projection module and a light receiving module. The projection module is configured to project a multi-wavelength polarized light onto a thin film. The projection module includes a light source and a polarization state generator. The light receiving module includes a polarization analyzer and an optical detector. The polarization analyzer is configured to screen out a multi-wavelength polarized reflection light according to reflection of the multi-wavelength polarized light by the thin film. The optical detector is configured to receive the multi-wavelength polarized reflection light. The optical detector includes at least one optical splitting unit, at least two optical filtering units and at least two optical detection units.

Abstract: An evaporation method in this disclosure is adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, an evaporation source plate is arranged to be heated by a heater so as to evaporate an evaporation material to its gaseous state, and then enable the gaseous evaporation material to travel passing through holes of a shutter device and thus spread toward the surface of the evaporation target substrate for depositing a film. Moreover, the evaporation method uses a transmission device for controlling the opening/closing of the holes, and there is a heating area formed at a position between the shutter device and the evaporation source plate for allowing the evaporation source plate, the plural holes, the heating area, the evaporation material and the heater to be arranged parallel to one another from the top to bottom.

Abstract: An evaporation method in this disclosure is adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, an evaporation source plate is arranged to be heated by a heater so as to evaporate an evaporation material to its gaseous state, and then enable the gaseous evaporation material to travel passing through holes of a shutter device and thus spread toward the surface of the evaporation target substrate for depositing a film. Moreover, the evaporation method uses a transmission device for controlling the opening/closing of the holes, and there is a heating area formed at a position between the shutter device and the evaporation source plate for allowing the evaporation source plate, the plural holes, the heating area, the evaporation material and the heater to be arranged parallel to one another from the top to bottom.

Abstract: An evaporation system and an evaporation method are disclosed, which are adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, the evaporation system comprises an evaporation material and an evaporation source plate, whereas the evaporation source plate is arranged to be heated by a heater so as to evaporate the evaporation material form its solid state into its gaseous state, and then enable the gaseous state evaporation material to travel passing through holes by the use of a shutter device so as to spread toward the surface of the evaporation target substrate for forming a film thereon. In addition, the evaporation system further comprises a transmission device, which is to be used for controlling the opening/closing of the holes of the shutter device.

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.

Abstract: A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.

Abstract: A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.