Abstract: A semiconductor device comprises an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction. A source region and a drain region are disposed in the active area, and are spaced apart along the channel direction. A channel is disposed in the active area and is interposed between the source region and the drain region. The channel comprises a two-dimensional electron gas (2DEG). A gate line is oriented along the transverse direction and is disposed on the channel and has a gate width in the channel direction. The gate line comprises gate material. A gate line terminus is disposed at each end of the gate line. Each gate line terminus comprises the gate material. Each gate line terminus has a width in the channel direction that is at least 1.2 time the gate width.

Abstract: The present disclosure relates to a transistor device having source and drain regions within a substrate. A gate electrode is between the source and drain regions. A spacer has a lower lateral portion along an upper surface of the substrate between the gate electrode and the drain region, a vertical portion extending along a sidewall of the gate electrode, and an upper lateral portion extending from the vertical portion to an outermost sidewall directly over the gate electrode. A field plate is disposed along an upper surface and a sidewall of the spacer and is separated from the gate electrode and the substrate by the spacer. A first ILD layer overlies the substrate, the gate electrode, and the field plate. A first conductive contact has opposing outermost sidewalls intersecting a first horizontally extending surface of the field plate between the gate electrode and the drain region.

Abstract: A circuit design method is provided, including the steps of: designing a plurality of paths, wherein each path includes a plurality of elements; determining a specific path of the plurality of paths by performing a timing analysis; replacing the specific element in the specific path with the configurable logic gate array cell; and selectively changing a connection mode of a metal layer to make the configurable logic gate array cell have another function. The timing analysis includes: for each path of the plurality of paths, determining whether a chip area meets a constraint condition and whether a timing violation will occur when a specific element in each path is replaced with a configurable logic gate array cell; and when both conditions are met, determining that path as the specific path.

Abstract: The present disclosure relates to a transistor device having source and drain regions within a substrate. A gate electrode is between the source and drain regions. A spacer has a lower lateral portion along an upper surface of the substrate between the gate electrode and the drain region, a vertical portion extending along a sidewall of the gate electrode, and an upper lateral portion extending from the vertical portion to an outermost sidewall directly over the gate electrode. A field plate is disposed along an upper surface and a sidewall of the spacer and is separated from the gate electrode and the substrate by the spacer. A first ILD layer overlies the substrate, the gate electrode, and the field plate. A first conductive contact has opposing outermost sidewalls intersecting a first horizontally extending surface of the field plate between the gate electrode and the drain region.

Abstract: The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the substrate. The spacer extends along a first gate sidewall closer to the drain region, crosses over an upper edge of the gate electrode, and further extends laterally to cover a portion of an upper surface of the gate electrode. A field plate including a polysilicon thin film is disposed along upper and sidewall surfaces of the spacer so that the polysilicon thin film is separated from the gate electrode and the substrate by the spacer. The thin polysilicon film field plate improves the breakdown voltage of the transistor device.

Abstract: A circuit design method is provided, including the steps of: designing a plurality of paths, wherein each path includes a plurality of elements; determining a specific path of the plurality of paths by performing a timing analysis; replacing the specific element in the specific path with the configurable logic gate array cell; and selectively changing a connection mode of a metal layer to make the configurable logic gate array cell have another function. The timing analysis includes: for each path of the plurality of paths, determining whether a chip area meets a constraint condition and whether a timing violation will occur when a specific element in each path is replaced with a configurable logic gate array cell; and when both conditions are met, determining that path as the specific path.

Abstract: The present invention provides a circuit design method, wherein the circuit design comprises the steps of: designing a plurality of paths, wherein each path comprises a plurality of elements; determining if the paths have enough timing margin to determine at least one specific path; and replacing at least one specific element within the specific path by a configurable gate array cell, wherein a function of the configurable gate array cell is the same as a function of the specific element.

Abstract: The present invention provides a circuit design method, wherein the circuit design comprises the steps of: designing a plurality of paths, wherein each path comprises a plurality of elements; determining if the paths have enough timing margin to determine at least one specific path; and replacing at least one specific element within the specific path by a configurable gate array cell, wherein a function of the configurable gate array cell is the same as a function of the specific element.