Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Abstract: A lighting device includes a light board and a light dimmer circuit. The light board includes multiple first light emitting elements and second light emitting elements. The first light emitting elements are disposed in a first area of the light board. The second light emitting elements are disposed in a second area of the light board. The light dimmer circuit is configured to drive the second light emitting elements to generate flickering lights from the second area of the light board, and is configured to drive the first light emitting elements to generate non-flickering lights from the first area of the light board.

Abstract: An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The shielding layers may include shielding structures such as a conductive mesh structure and/or a transparent conductive film. The shielding structures may be actively driven or passively biased. In the active driving scheme, one or more inverting circuits may receive a noise signal from a cathode layer in the display and/or from the shielding structures, invert the received noise signal, and drive the inverted noise signal back onto the shielding structures to prevent any noise from the display from negatively impacting the performance of the touch sensors. In the passive biasing scheme, the shielding structures may be biased to a power supply voltage.

Abstract: A voltage sensor and the method for compensating installation position variation thereof are disclosed. The voltage sensor may comprise a casing, two substrates, a plurality of voltage sensing units and an iterative operation unit. One side of the casing may include two grooves. The substrates may be respectively disposed in the grooves, and an accommodating space is formed between the substrates. The voltage sensing units may be disposed on the substrates to measure a plurality voltage parameters of a dual-wire power cable disposed in the accommodating space. The iterative operation unit can be disposed in the casing and connected to the voltage sensing units, wherein the iterative operation unit can perform an iterative operation process according to a compensation database and the voltage parameters for compensating the horizontal and vertical displacements occurring when installing the voltage sensor on the cable, and calculate the estimated input voltage of the cable.

Abstract: A voltage sensor and the method for compensating installation position variation thereof are disclosed. The voltage sensor may comprise a casing, two substrates, a plurality of voltage sensing units and an iterative operation unit. One side of the casing may include two grooves. The substrates may be respectively disposed in the grooves, and an accommodating space is formed between the substrates. The voltage sensing units may be disposed on the substrates to measure a plurality voltage parameters of a dual-wire power cable disposed in the accommodating space. The iterative operation unit can be disposed in the casing and connected to the voltage sensing units, wherein the iterative operation unit can perform an iterative operation process according to a compensation database and the voltage parameters for compensating the horizontal and vertical displacements occurring when installing the voltage sensor on the cable, and calculate the estimated input voltage of the cable.

Abstract: A voltage sensor and the method for compensating installation position variation thereof are disclosed. The voltage sensor may comprise a casing, two substrates, a plurality of voltage sensing units and an iterative operation unit. One side of the casing may include two grooves. The substrates may be respectively disposed in the grooves, and an accommodating space is formed between the substrates. The voltage sensing units may be disposed on the substrates to measure a plurality voltage parameters of a dual-wire power cable disposed in the accommodating space. The iterative operation unit can be disposed in the casing and connected to the voltage sensing units, wherein the iterative operation unit can perform an iterative operation process according to a compensation database and the voltage parameters for compensating the horizontal and vertical displacements occurring when installing the voltage sensor on the cable, and calculate the estimated input voltage of the cable.

Abstract: A compensating apparatus for installing variation of a non-contact current sensor on a two-wire power cable includes a non-contact current sensor, a sensing element characteristic measuring unit and a non-contact current measurement module. The non-contact current sensor mounted top to the two-wire power cable further has a first current sensor, a second current sensor, and a third current sensor. The sensing element characteristic measuring unit is to construct a space characteristic measuring database for the non-contact current sensor respective to the two-wire power cable. The non-contact current measurement module is to pair the space characteristic measuring database so as to compute and further output a measured value of the current I in the two-wire power cable.

Abstract: The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top surface of the insulation region; a gate over the semiconductor fin; and a regrowth region partially positioned in the semiconductor fin, and the regrowth region forming a source/drain region of the semiconductor structure; wherein a profile of the regrowth region taken along a plane perpendicular to a direction of the semiconductor fin and top surfaces of the insulation region includes a girdle, an upper girdle facet facing away from the insulation region, and a lower girdle facet facing toward the insulation region, and an angle between the upper girdle facet and the girdle is greater than about 54.7 degrees.

Abstract: The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top surface of the insulation region; a gate over the semiconductor fin; and a regrowth region partially positioned in the semiconductor fin, and the regrowth region forming a source/drain region of the semiconductor structure; wherein a profile of the regrowth region taken along a plane perpendicular to a direction of the semiconductor fin and top surfaces of the insulation region includes a girdle, an upper girdle facet facing away from the insulation region, and a lower girdle facet facing toward the insulation region, and an angle between the upper girdle facet and the girdle is greater than about 54.7 degrees.

Abstract: The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top surface of the insulation region; a gate over the semiconductor fin; and a regrowth region partially positioned in the semiconductor fin, and the regrowth region forming a source/drain region of the semiconductor structure; wherein a profile of the regrowth region taken along a plane perpendicular to a direction of the semiconductor fin and top surfaces of the insulation region includes a girdle, an upper girdle facet facing away from the insulation region, and a lower girdle facet facing toward the insulation region, and an angle between the upper girdle facet and the girdle is greater than about 54.7 degrees.

Abstract: The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top surface of the insulation region; a gate over the semiconductor fin; and a regrowth region partially positioned in the semiconductor fin, and the regrowth region forming a source/drain region of the semiconductor structure; wherein a profile of the regrowth region taken along a plane perpendicular to a direction of the semiconductor fin and top surfaces of the insulation region includes a girdle, an upper girdle facet facing away from the insulation region, and a lower girdle facet facing toward the insulation region, and an angle between the upper girdle facet and the girdle is greater than about 54.7 degrees.

Abstract: A voltage sensor and the method for compensating installation position variation thereof are disclosed. The voltage sensor may comprise a casing, two substrates, a plurality of voltage sensing units and an iterative operation unit. One side of the casing may include two grooves. The substrates may be respectively disposed in the grooves, and an accommodating space is formed between the substrates. The voltage sensing units may be disposed on the substrates to measure a plurality voltage parameters of a dual-wire power cable disposed in the accommodating space. The iterative operation unit can be disposed in the casing and connected to the voltage sensing units, wherein the iterative operation unit can perform an iterative operation process according to a compensation database and the voltage parameters for compensating the horizontal and vertical displacements occurring when installing the voltage sensor on the cable, and calculate the estimated input voltage of the cable.

Abstract: A compensating apparatus for installing variation of a non-contact current sensor on a two-wire power cable includes a non-contact current sensor, a sensing element characteristic measuring unit and a non-contact current measurement module. The non-contact current sensor mounted top to the two-wire power cable further has a first current sensor, a second current sensor, and a third current sensor. The sensing element characteristic measuring unit is to construct a space characteristic measuring database for the non-contact current sensor respective to the two-wire power cable. The non-contact current measurement module is to pair the space characteristic measuring database so as to compute and further output a measured value of the current I in the two-wire power cable.

Abstract: The invention discloses an electrical sensor for a two-wire power cable. The sensor includes: a flexible substrate joined onto the power cable or the protective jacket thereon; an inductive coil formed on the flexible substrate; a pair of metal electrodes formed on the flexible substrate and at the opposite sides of the power cable, respectively; and a readout circuit formed on the flexible substrate, electrically connected to the inductive coil so as to measure the current in the power cable, and electrically connected to the metal electrodes so as to measure the voltage in the power cable.

Abstract: A proximity electric current sensing device includes a main body, a first and second adjusting components, a first to third sensing units. The main body has a hole for a conducting wire to go through. The first and second adjusting components are disposed on a first and second sides of the main body respectively for adjusting a first and second positions of the conducting wire. The first to third sensing units are disposed on the main body and adjacent to a first to third sides of the conducting wire respectively for sensing a first to third magnetic fluxes of the conducting wire. The processing unit rotates the adjusting components to ensure the third sensing unit is right above the center of the conducting wire according to the first and second magnetic flux, estimates an installation position, and calculates an amount of an electric current according to the third magnetic flux.

Abstract: The invention discloses an electrical sensor for a two-wire power cable. The sensor includes: a flexible substrate joined onto the power cable or the protective jacket thereon; an inductive coil formed on the flexible substrate; a pair of metal electrodes formed on the flexible substrate and at the opposite sides of the power cable, respectively; and a readout circuit formed on the flexible substrate, electrically connected to the inductive coil so as to measure the current in the power cable, and electrically connected to the metal electrodes so as to measure the voltage in the power cable.

Abstract: A proximity electric current sensing device includes a main body, a first and second adjusting components, a first to third sensing units. The main body has a hole for a conducting wire to go through. The first and second adjusting components are disposed on a first and second sides of the main body respectively for adjusting a first and second positions of the conducting wire. The first to third sensing units are disposed on the main body and adjacent to a first to third sides of the conducting wire respectively for sensing a first tothird magnetic fluxes of the conducting wire. The processing unit rotates the adjusting components to ensure the third sensing unit is right above the center of the conducting wire according to the first and second magnetic flux, estimates an installation position, and calculates an amount of an electric current according to the third magnetic flux.