Abstract: A device including functional blocks and dummy cells. The functional blocks include a first functional block and a second functional block. Each dummy cell having a cell boundary defined by non-functioning active areas and non-functioning gates for filling space between the functional blocks and including a dummy cell configured to be situated between the first functional block and the second functional block such that the dummy cell directly abuts each of the first functional block and the second functional block.

Abstract: A method of forming a memory structure includes the following steps. A CMOS circuitry is formed over a semiconductor substrate. A bit line array is formed to be electrically connected to the CMOS circuitry. A memory array is formed over the bit line array. The memory array is formed by forming a word line stack, and forming first and second sets of stacked memory cells. The word line stack is formed on the bit line array and has a first side surface and a second side surface. The first sets of stacked memory cells are formed along the first side surface. The second sets of stacked memory cells are formed along the second side surface, wherein the second sets of stacked memory cells are staggered from the first sets of stacked memory cells. A source line array is formed over the memory array and electrically connected to the CMOS circuitry.

Abstract: A method of forming a memory structure includes the following steps. A CMOS circuitry is formed over a semiconductor substrate. A bit line array is formed to be electrically connected to the CMOS circuitry. A memory array is formed over the bit line array. The memory array is formed by forming a word line stack, and forming first and second sets of stacked memory cells. The word line stack is formed on the bit line array and has a first side surface and a second side surface. The first sets of stacked memory cells are formed along the first side surface. The second sets of stacked memory cells are formed along the second side surface, wherein the second sets of stacked memory cells are staggered from the first sets of stacked memory cells. A source line array is formed over the memory array and electrically connected to the CMOS circuitry.

Abstract: A device including functional blocks and dummy cells. The functional blocks include a first functional block and a second functional block. Each dummy cell having a cell boundary defined by non-functioning active areas and non-functioning gates for filling space between the functional blocks and including a dummy cell configured to be situated between the first functional block and the second functional block such that the dummy cell directly abuts each of the first functional block and the second functional block.

Abstract: A method of forming a memory structure includes the following steps. A CMOS circuitry is formed over a semiconductor substrate. A bit line array is formed to be electrically connected to the CMOS circuitry. A memory array is formed over the bit line array. The memory array is formed by forming a word line stack, and forming first and second sets of stacked memory cells. The word line stack is formed on the bit line array and has a first side surface and a second side surface. The first sets of stacked memory cells are formed along the first side surface. The second sets of stacked memory cells are formed along the second side surface, wherein the second sets of stacked memory cells are staggered from the first sets of stacked memory cells. A source line array is formed over the memory array and electrically connected to the CMOS circuitry.