Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Abstract: SPEEK solid electrolytes and preparation methods thereof are provided. The SPEEK solid electrolyte comprises sulfonated polyetheretherketone (SPEEK), an electrolyte, and a solvent. The electrolyte is a lithium salt.

Abstract: Polymer-based solid electrolytes and preparation methods thereof are provided. The polymer-based solid electrolyte comprises a polymer, an electrolyte, and a solvent. The polymer of the solid electrolyte can be polyvinyl alcohol (PVA) or sulfonated polyetheretherketone (SPEEK). The electrolyte is a lithium salt.