Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. In addition, the nanostructures includes channel regions and source/drain regions. The semiconductor structure further includes a gate structure vertically sandwiched the channel regions of the nanostructures and a contact wrapping around and vertically sandwiched between the source/drain regions of the nanostructures.

Abstract: A public transport vehicle charging system is applied to multiple charging stations and an electric vehicle. The public transport vehicle charging system includes a server communicatively connected to the charging stations and the electric vehicle. The server is configured to establish a charging decision model according to multiple historical conditions and a transport schedule. The server is configured to calculate multiple ideal decisions according to the historical conditions and the transport schedule, so as to adjust multiple parameters in the charging decision model. When the electric vehicle drives toward a first charging station according to the transport schedule, the server is configured to input a current condition into the charging decision model, so as to selectively charge the electric vehicle by the first charging station. The current condition includes a current remaining power and a current position of the electric vehicle.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A semiconductor structure includes a first tier, a redistribution circuit structure, and a second tier. The first tier includes at least one first die. The redistribution circuit structure is disposed on the first tier and electrically coupled to the at least one first die, where the redistribution circuit structure has a multi-layer structure and includes a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, and the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure. The second tier includes a plurality of second dies, and is disposed on and electrically coupled to the redistribution circuit structure.

Abstract: An electrical connector assembly includes: a bracket; and at least one transmission assembly mounted to the bracket and including an internal printed circuit board (PCB), a board-mount connector connected to a first row of conductive pads disposed at a bottom end portion of the PCB, and a plug-in connector connected to a second row of conductive pads disposed at a front end portion of the PCB, wherein the PCB has a third row of conductive pads disposed at a rear end portion thereof.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.

Abstract: A conductivity measurement method for measuring the conductivity of a fluid in a washing chamber in an electrical washing machine using a water quality sensor consisting of a control unit and first and second conductors by alternatively changing the electric potential of the first and second conductors and repeatedly measuring the conductivity of the fluid in the washing chamber between the first and second conductors upon each electric potential alternation.

Abstract: An electronic device and housing thereof are provided. The electronic device includes housing, a partition, multiple electronic elements, and a fan. The housing has a side edge, where the side edge is provided with a slit. The partition is disposed in the case, is separated by a distance with the slit, and divides the interior of the case into a first and a second space. The partition has a through hole, the second space is in communication with the first space through the through hole, and the first space is in communication with the outside of the case through the slit. The electronic elements and the fan are disposed in the second space, and an air outlet of the fan is adjacent to the through hole, so that air in the second space can be driven to flow from the first space to the outside through the slit.

Abstract: An electronic device and housing thereof are provided. The electronic device includes housing, a partition, multiple electronic elements, and a fan. The housing has a side edge, where the side edge is provided with a slit. The partition is disposed in the case, is separated by a distance with the slit, and divides the interior of the case into a first and a second space. The partition has a through hole, the second space is in communication with the first space through the through hole, and the first space is in communication with the outside of the case through the slit. The electronic elements and the fan are disposed in the second space, and an air outlet of the fan is adjacent to the through hole, so that air in the second space can be driven to flow from the first space to the outside through the slit.