Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.

Abstract: An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.

Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.

Abstract: A semiconductor device is disposed and includes a substrate, on which a scan line, a data line, a source electrode, a drain electrode, an organic semiconductor pattern, an organic insulating layer, a gate electrode, and an organic protection layer are disposed. The source electrode is electrically connected to the data line. The organic semiconductor pattern is disposed between the source electrode and the drain electrode. The organic insulating layer is disposed on an upper surface and a side surface of the organic semiconductor pattern. The organic insulating layer is at least disposed between the side surface of the organic semiconductor pattern and the gate electrode and disposed between the upper surface of the organic semiconductor pattern and the gate electrode. The gate electrode is electrically connected to the scan line. The organic protection layer covers the gate electrode.

Abstract: A method for utilizing a probe card includes steps as follows. Providing a probe card having three alignment marks on a reference plane of a circuit board; moving the circuit board to be oriented to a wafer-loading plane of a wafer stage with the reference plane; determining whether a geometric plane defined by the alignment marks is parallel to the wafer-loading plane; and when the geometric plane is not parallel to the wafer-loading plane, adjusting a levelness of the circuit board until the reference plane is parallel to the wafer-loading plane.

Abstract: A brightness calibration method used in an optical detection system includes a single source illuminator and a probe card. The single source illuminator is configured to illuminate the probe card. The probe card has a plurality of detection sites. The brightness calibration method includes: sequentially detecting brightness values at the detection sites through one of a plurality of diffusers by a sensing chip; sequentially detecting transparencies of the diffusers at one of the detection sites by the sensing chip; and selecting and respectively disposing the diffusers corresponding to larger ones of the transparencies over the detection sites corresponding to smaller ones of the brightness values, and selecting and respectively disposing the diffusers corresponding to smaller ones of the transparencies over the detection sites corresponding to larger ones of the brightness values.

Abstract: A method for utilizing a probe card includes steps as follows. Providing a probe card having three alignment marks on a reference plane of a circuit board; moving the circuit board to be oriented to a wafer-loading plane of a wafer stage with the reference plane; determining whether a geometric plane defined by the alignment marks is parallel to the wafer-loading plane; and when the geometric plane is not parallel to the wafer-loading plane, adjusting a levelness of the circuit board until the reference plane is parallel to the wafer-loading plane.

Abstract: A brightness calibration method used in an optical detection system includes a single source illuminator and a probe card. The single source illuminator is configured to illuminate the probe card. The probe card has a plurality of detection sites. The brightness calibration method includes: sequentially detecting brightness values at the detection sites through one of a plurality of diffusers by a sensing chip; sequentially detecting transparencies of the diffusers at one of the detection sites by the sensing chip; and selecting and respectively disposing the diffusers corresponding to larger ones of the transparencies over the detection sites corresponding to smaller ones of the brightness values, and selecting and respectively disposing the diffusers corresponding to smaller ones of the transparencies over the detection sites corresponding to larger ones of the brightness values.

Abstract: A detector for detecting an image sensor is provided. The image sensor is electrically connected to a wafer via a contacting pad. The detector includes a parallel light source, a pin and a diffuser. The parallel light source radiates a parallel light. The pin is electrically connected to the contacting pad. The diffuser is disposed between the parallel light source and the pin. The parallel light from the parallel light source passes through the diffuser and then reaches the image sensor on the wafer.