Abstract: The invention provides a semiconductor structure, which comprises a substrate, a gate dielectric layer on the substrate, wherein the gate dielectric layer comprises two sidewall portions and a horizontal portion between the two sidewall portions, wherein a height of the horizontal portion is lower than that of the two sidewall portions, and the horizontal portion and the two sidewall portions are perpendicular to each other, and a gate conductive layer on the horizontal portion of the gate dielectric layer.

Abstract: A housing structure manufacturing method and an electronic device are provided. The housing structure manufacturing method includes providing a plurality of memory polymeric materials, heating the plurality of memory polymeric materials, and forming the housing structure having a first morphology by printing the plurality of memory polymeric materials that are heated.

Abstract: The instant disclosure provides a dynamic random access memory (DRAM) module including a housing, a circuit board and a fluorine engineered fluid. The housing includes an accommodating space and an opening on a side thereof. The circuit board has at least a DRAM chip disposed thereon. The circuit board is received in the accommodating space and one end of the circuit board has at least a circuit contact protruding from the opening to the exterior of the housing. The fluorine electronic engineering fluid is sealed in the accommodating space and is thermally connected to at least one of the DRAM chip.