Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A shallow recess, a first deep recess and a second deep recess are disposed in the second III-V compound layer. The first deep recess and the second deep recess are respectively disposed at two sides of the shallow recess. The source electrode fills in the first deep recess and contacts the top surface of the first III-V compound layer. A drain electrode fills in the second deep recess and contacts the top surface of the first III-V compound layer. The shape of the source electrode and the shape of the drain electrode are different from each other. A gate electrode is disposed on the shallow recess.

Abstract: A method for fabricating a semiconductor device includes the steps of providing a first wafer and a second wafer as the first wafer includes a device wafer and the second wafer includes a blanket wafer, bonding the first wafer and the second wafer, performing a thermal treatment process to separate the second wafer into a first portion and a second portion, and then planarizing the first portion.

Abstract: A control method for a solid state drive is provided. The solid state drive includes a non-volatile memory with plural blocks. In a step (a1), a block is opened. In a step (a2), a program action is performed to store a valid write data into the open block. Then, a step (a3) is performed to judge whether an amount of the valid write data in the open block reaches a predetermined capacity. In a step (a4), if the amount of the valid write data in the open block does not reach the predetermined capacity, the step (a2) is performed again. In a step (a5), if the amount of the valid write data in the open block reaches the predetermined capacity, the open block is closed and the step (a1) is performed again. The predetermined capacity is lower than a capacity of one block.

Abstract: A control method for a solid state drive is provided. The solid state drive includes a non-volatile memory with plural blocks. In a step (a1), a block is opened. In a step (a2), a program action is performed to store a valid write data into the open block. Then, a step (a3) is performed to judge whether an amount of the valid write data in the open block reaches a predetermined capacity. In a step (a4), if the amount of the valid write data in the open block does not reach the predetermined capacity, the step (a2) is performed again. In a step (a5), if the amount of the valid write data in the open block reaches the predetermined capacity, the open block is closed and the step (a1) is performed again. The predetermined capacity is lower than a capacity of one block.

Abstract: A data processing method for a computer system is provided. The computer system includes a host and an open-channel solid state drive. The open-channel solid state drive is connected with the host. The data processing method includes the following steps. Firstly, plural block characteristic parameters of a specified block in a non-volatile memory of the open-channel solid state drive are collected. Then, the plural block characteristic parameters are inputted into a prediction function, so that a prediction value is acquired. If the prediction value exceeds a threshold value, a data in the specified block of the non-volatile memory is moved to a blank block of the non-volatile memory by the host.

Abstract: A server system includes at least one server. The server comprises a processing circuit and plural solid state drives. The plural solid state drives are connected with the processing circuit. A first solid state drive of the plural solid state drives includes a control circuit and a non-volatile memory. The control circuit is connected with the processing circuit. The non-volatile memory is connected with the control circuit. The control circuit includes a prediction model. The prediction model predicts a life time of the first solid state drive. If the prediction model predicts that the first solid state drive will be damaged in a specified time, the control circuit issues a critical warning signal to the processing circuit.

Abstract: A data processing method for a computer system is provided. The computer system includes a host and an open-channel solid state drive. The open-channel solid state drive is connected with the host. The data processing method includes the following steps. Firstly, plural block characteristic parameters of a specified block in a non-volatile memory of the open-channel solid state drive are collected. Then, the plural block characteristic parameters are inputted into a prediction function, so that a prediction value is acquired. If the prediction value exceeds a threshold value, a data in the specified block of the non-volatile memory is moved to a blank block of the non-volatile memory by the host.

Abstract: A solid state drive with a reset circuit includes a controlling circuit, a flash array and a buffer. The controlling circuit includes a physical layer circuit and a first input/output port. The first input/output port is connected with a first reset terminal of a host. The flash array and the buffer are connected with the controlling circuit. When the first reset terminal of the host activates a reset signal, a voltage level of the first input/output port is changed. After a delay time, the voltage level of a second reset terminal of the physical layer circuit is changed and the physical layer circuit is reset.

Abstract: A solid state drive with a reset circuit includes a controlling circuit, a flash array and a buffer. The controlling circuit includes a physical layer circuit and a first input/output port. The first input/output port is connected with a first reset terminal of a host. The flash array and the buffer are connected with the controlling circuit. When the first reset terminal of the host activates a reset signal, a voltage level of the first input/output port is changed. After a delay time, the voltage level of a second reset terminal of the physical layer circuit is changed and the physical layer circuit is reset.

Abstract: A data erasing method of a solid state drive is provided. The solid state drive includes a memory module. The memory module includes a block. A data to be erased is stored in the block. The data erasing method includes steps of performing a first erasing operation to erase the block, programming the block after the first erasing operation, and performing a second erasing operation to erase the block.

Abstract: A data erasing method of a solid state drive is provided. The solid state drive includes a memory module. The memory module includes a block. A data to be erased is stored in the block. The data erasing method includes steps of performing a first erasing operation to erase the block, programming the block after the first erasing operation, and performing a second erasing operation to erase the block.

Abstract: A resonant power converter is provided and includes a capacitor, an inductive device, a first transistor, a second transistor, and a control circuit. The capacitor and the inductive device develop a resonant tank. The first transistor and the second transistor are coupled to switch the resonant tank. The control circuit generates a first signal and a second signal to control the first transistor and the second transistor respectively. Frequencies of the first signal and the second signal are changed for regulating output of the resonant power converter. The control circuit is further coupled to detect an input voltage of the resonant power converter. A pulse width of the second signal is modulated in response to change of the input voltage.

Abstract: A synchronous rectifying circuit of a resonant switching power converter is provided to improve the efficiency. The synchronous rectifying circuit includes a power transistor and a diode connected to a transformer and an output ground of the power converter for rectifying. A sense transistor is coupled to the power transistor for generating a mirror current correlated to a current of the power transistor. A controller generates a driving signal to control the power transistor in response to a switching-current signal. A current-sense device is coupled to the sense transistor for generating the switching-current signal in response to the mirror current. The controller enables the driving signal to turn on the power transistor once the diode is forwardly biased. The controller generates a reset signal to disable the driving signal and turn off the power transistor once the switching-current signal is lower than a threshold.

Abstract: A resonant power converter is provided and includes a capacitor, an inductive device, a first transistor, a second transistor, and a control circuit. The capacitor and the inductive device develop a resonant tank. The first transistor and the second transistor are coupled to switch the resonant tank. The control circuit generates a first signal and a second signal to control the first transistor and the second transistor respectively. Frequencies of the first signal and the second signal are changed for regulating output of the resonant power converter. The control circuit is further coupled to detect an input voltage of the resonant power converter. A pulse width of the second signal is modulated in response to change of the input voltage.

Abstract: A synchronous rectifying circuit of a resonant switching power converter is provided to improve the efficiency. The synchronous rectifying circuit includes a power transistor and a diode connected to a transformer and an output ground of the power converter for rectifying. A sense transistor is coupled to the power transistor for generating a mirror current correlated to a current of the power transistor. A controller generates a driving signal to control the power transistor in response to a switching-current signal. A current-sense device is coupled to the sense transistor for generating the switching-current signal in response to the mirror current. The controller enables the driving signal to turn on the power transistor once the diode is forwardly biased. The controller generates a reset signal to disable the driving signal and turn off the power transistor once the switching-current signal is lower than a threshold.

Abstract: In a track control method for marking a label side of an optical disc, a data side of the optical disc is first oriented to an optical head. A light beam is then emitted and a sled carrying the optical head moves. A series of moving distances of the sled are calculated according to the light beam reflected by the optical disc, which are then recorded in a memory. The optical disc is then flipped to have the label side face the optical head, and the shift of the optical head is controlled to mark on tracks of the label side according to the series of moving distances recorded in the memory.