Patents by Inventor Shih-Hung Li

Shih-Hung Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10596670
    Abstract: The disclosure is a thermal stability control system and a control method thereof for a machine tool. The control system mainly consists of a machine cooling sub-system composed of a pump, at least a cooling loop and a tank for storing cooling fluid, a cooling fluid cooling and heating sub-system, a heater and a micro controller. The cooling fluid cooling and heating sub-system further consists of a condenser, an evaporator, a directional valve, an expansion valve and a compressor. The micro controller dominates corresponding operation combinations of turning on/off the heater, enabling/disenabling the cooling fluid cooling and heating sub-system as a heat pump or a cooler by activating/releasing the directional vale, and adjusting upward/downward the driving frequency of an inverter duty motor to drive the pump to change the flow rate of cooling fluid through the cooling loop according the real time load of the machine tool.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: March 24, 2020
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yan-Sin Liao, Shih-Jie Wei, Kun-Ying Li, Shi-Jie Luo, Hsi-Hung Hsiao
  • Publication number: 20200062285
    Abstract: A monitor vehicle for a rail system includes a wheeled trolley, an overhead vehicle, a supporting structure, and a first sensor. The wheeled trolley is above a rail of the rail system, is operable to move over the rail, and has a bottom surface. The overhead vehicle body is suspended by the wheeled trolley and below the rail. The supporting structure connects the wheeled trolley and the overhead vehicle body. The first sensor is on the bottom surface of the wheeled trolley and is configured to detect a first parameter of the rail of the rail system.
    Type: Application
    Filed: November 4, 2019
    Publication date: February 27, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Hung CHIEN, Jen-Ti WANG, Fu-Hsien LI, Chih-Hung LIU, Yung-Lin HSU
  • Publication number: 20200055158
    Abstract: This disclosure relates to a temperature control system that may be applied to a machine tool. The system includes a cooling circulation and a controller. The cooling circulation comprises a pump, a cooler and a solenoid valve. The pump may be driven by a variable frequency motor so as to flow through the spindle of the machine tool. The cooler is serially connected with the liquid pump, and may cool the liquid coolant. The solenoid valve connects to inlet and outlet of the cooler, and may prevent the liquid coolant flows through the spindle from flowing back to the cooler. The controller is electrically connected with the variable frequency motor, the cooler and the solenoid valve. Further, the controller is connected to the machine tool to detect several parameters, so as to control the variable frequency motor, the cooler and the solenoid valve.
    Type: Application
    Filed: October 25, 2018
    Publication date: February 20, 2020
    Inventors: Shih-Jie WEI, Kun-Ying Li, Yan-sin Liao, Shi-Jie Luo, Hsi-Hung Hsiao, Szu-Chia Lin
  • Patent number: 10543367
    Abstract: The invention provides transcranial electrostimulation by combining transcranial direct current stimulation (tDCS) and theta burst stimulation (TBS) to achieve an unexpected therapeutic effect in various brain or neural diseases. Accordingly, the invention provides a mode of direct current with biphasic square wave pulses in the treatment of brain or neural diseases. Also provided are methods of employing the transcranial electrostimulation of the invention and applications of the transcranial electrostimulation of the invention.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: January 28, 2020
    Assignees: TAIPEI MEDICAL UNIVERSITY, NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Chih-Wei Peng, Shih-Ching Chen, Yu Ting Li, Hsiang Ching Lee, Jia-Jin J. Chen, Tsung-Hsun Hsieh, Chien-Hung Lai, Jiunn-Horng Kang
  • Patent number: 10515867
    Abstract: The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
    Type: Grant
    Filed: January 24, 2018
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Hsi Wu, Wensen Hung, Tsung-Shu Lin, Shih-Chang Ku, Tsung-Yu Chen, Hung-Chi Li
  • Publication number: 20190378752
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Application
    Filed: June 16, 2019
    Publication date: December 12, 2019
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin
  • Patent number: 10464583
    Abstract: A monitor vehicle for a rail system includes a wheeled trolley, an overhead vehicle body, at least one supporting structure, and at least one first sensor. The wheeled trolley is operable to move over one or more rails of the rail system. The supporting structure connects the wheeled trolley and overhead vehicle body. The first sensor is on the wheeled trolley and configured to detect at least one first parameter of the one or more rails of the rail system.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: November 5, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Hung Chien, Jen-Ti Wang, Fu-Hsien Li, Chih-Hung Liu, Yung-Lin Hsu
  • Patent number: 10411088
    Abstract: A semiconductor device including a substrate and a shallow trench isolation (STI) structure is provided. The substrate has a first voltage area and a second voltage area. A top surface of the substrate in the second voltage area is higher than a top surface of the substrate in the first voltage area, and a trench is defined in the substrate in between the first and second voltage area. The STI structure is located in the substrate within the trench, wherein a first portion of the STI structure is located in the first voltage area, a second portion of the STI structure is located in the second voltage area, and a step height difference exist in between a bottom surface of the first portion of the STI structure in the first voltage area and a bottom surface of the second portion of the STI structure in the second voltage area.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: September 10, 2019
    Assignee: United Microelectronics Corp.
    Inventors: Chang-Po Hsiung, Ping-Hung Chiang, Shih-Chieh Pu, Chia-Lin Wang, Nien-Chung Li, Wen-Fang Lee, Shih-Yin Hsiao, Chih-Chung Wang
  • Patent number: 10373861
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: August 6, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin
  • Patent number: 10370066
    Abstract: A separable buoy includes a center float having a top surface that includes an upper peripheral end and an engagement bevel provided on the upper peripheral end that extends below the top surface; a separable float unit detachably disposed at the center float and including a dome wall that is provided in a lower central portion thereof and that has a peripheral edge configured to detachably engage the engagement bevel: and a chamber defined between the dome wall of the separable float unit and the top surface of the center float when the separable float unit engages the center float, wherein the center float has a vertical height that substantially equals or exceeds that of a lower portion of the separable float unit.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: August 6, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shih-Ying Chiang, Shih-Sheng Hsu, Yi-Chieh Huang, Heng-Chu Peng, Tzu-Hung Huang, Yi-Chen Li
  • Publication number: 20190189577
    Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 ?m to about 3 ?m. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.
    Type: Application
    Filed: November 19, 2018
    Publication date: June 20, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Hung CHEN, Yu-Nu HSU, Chun-Chen LIU, Heng-Chi HUANG, Chien-Chen LI, Shih-Yen CHEN, Cheng-Nan HSIEH, Kuo-Chio LIU, Chen-Shien CHEN, Chin-Yu KU, Te-Hsun PANG, Yuan-Feng WU, Sen-Chi CHIANG
  • Publication number: 20190148261
    Abstract: The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
    Type: Application
    Filed: January 24, 2018
    Publication date: May 16, 2019
    Inventors: CHI-HSI WU, WENSEN HUNG, TSUNG-SHU LIN, SHIH-CHANG KU, TSUNG-YU CHEN, HUNG-CHI LI
  • Patent number: 6773507
    Abstract: Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.
    Type: Grant
    Filed: August 7, 2002
    Date of Patent: August 10, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Ravi Jallepally, Shih-Hung Li, Alain Duboust, Jun Zhao, Liang-Yuh Chen, Daniel A. Carl
  • Patent number: 6620670
    Abstract: A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer of aluminum precursor is chemisorbed onto the substrate surface. Thereafter, non-chemisorbed aluminum precursor is purged from the processing chamber, followed by introduction of an oxygen precursor. The oxygen precursor reacts with the chemisorbed layer, resulting in a monolayer of Al2O3. Finally, excess oxygen precursor and by-products of the reaction are purged completing the sequential deposition cycle. The sequential deposition cycle can be repeated to grow the Al2O3 film to a desired thickness.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: September 16, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Song, Jallepally Ravi, Shih-Hung Li, Liang-Yuh Chen
  • Publication number: 20030139005
    Abstract: A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer of aluminum precursor is chemisorbed onto the substrate surface. Thereafter, non-chemisorbed aluminum precursor is purged from the processing chamber, followed by introduction of an oxygen precursor. The oxygen precursor reacts with the chemisorbed layer, resulting in a monolayer of Al2O3. Finally, excess oxygen precursor and by-products of the reaction are purged completing the sequential deposition cycle. The sequential deposition cycle can be repeated to grow the Al2O3 film to a desired thickness.
    Type: Application
    Filed: January 18, 2002
    Publication date: July 24, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kevin Song, Ravi Jallepally, Shih-Hung Li, Liang-Yuh Chen
  • Patent number: 6596085
    Abstract: A deposition system for performing chemical vapor deposition comprising deposition chamber and a vaporizer coupled to said chamber. In one aspect, the vaporizer has a relatively short mixing passageway to mix a carrier gas with a liquid precursor to produce a fine aerosol-like dispersion of liquid precursor which is vaporized by a hot plate.
    Type: Grant
    Filed: February 1, 2000
    Date of Patent: July 22, 2003
    Assignee: Applied Materials, Inc.
    Inventors: John Vincent Schmitt, Shih-Hung Li, Christophe Marcadal, Anzhong Chang, Ling Chen
  • Publication number: 20030106490
    Abstract: Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.
    Type: Application
    Filed: August 7, 2002
    Publication date: June 12, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Ravi Jallepally, Shih-Hung Li, Alain Duboust, Jun Zhao, Liang-Yuh Chen, Daniel A. Carl
  • Patent number: 6274878
    Abstract: An apparatus and method for monitoring the inclination of a wafer residing within a pocket of a semiconductor processing chamber susceptor. The apparatus of the present invention includes a laser beam source that is positioned to direct a laser beam onto the top surface of a wafer that has been positioned within a susceptor pocket. A laser receiver is positioned to detect the laser beam after it has been reflected off the surface of the wafer. The laser receiver emits an output signal to a visual or audible indicator that indicates whether or not the wafer is properly positioned within the pocket of the susceptor.
    Type: Grant
    Filed: June 6, 2000
    Date of Patent: August 14, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Shih-Hung Li, Curtis Vass
  • Patent number: 6251759
    Abstract: An improvement in the deposition of materials in a multiple chamber semiconductor processing cluster tool comprising a first cluster of first chambers, a second cluster of second chambers and a transition chamber located between the first cluster and the second cluster, where the transition chamber is adapted to deposit a material upon a wafer. Specifically, the transition chamber provides a flash coating of PVD copper on the wafer which significantly improves the adhesion of subsequently CVD deposited bulk copper without sacrifice in the throughput of the cluster tool.
    Type: Grant
    Filed: October 3, 1998
    Date of Patent: June 26, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Xin Sheng Guo, John V. Schmitt, Shih-Hung Li
  • Patent number: 6197117
    Abstract: An apparatus and method for monitoring the level of a semiconductor processing chamber susceptor and the inclination of a wafer residing within a pocket of the susceptor. In one embodiment, a light beam transmitter is positioned to direct a light beam, such as a laser beam, onto the top surface of a wafer that has been positioned within a susceptor pocket. The light beam forms a target spot of a particular size and shape on the surface of the wafer. A camera is positioned to observe the target spot. A change in the angular orientation of the wafer or susceptor will result in a change in the size and shape of the target spot. The camera is configured to detect changes in the target spot size and shape. A logic circuit is provided at the output of the camera to correlate the observed shape and size of the target spot to a value indicative of the levelness of the susceptor and/or the inclination of a wafer located within the pocket of the susceptor.
    Type: Grant
    Filed: July 23, 1997
    Date of Patent: March 6, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Shih-Hung Li, Curtis Vass