Abstract: A semiconductor device includes a single-layered dielectric layer, a conductive line, a conductive via and a conductive pad. The conductive line and the conductive via are disposed in the single-layered dielectric layer. The conductive pad is extended into the single-layered dielectric layer to electrically connected to the conductive line.

Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.

Abstract: A server includes a chassis and a storage module. The storage module is disposed in the chassis. The storage module includes a base, a first electrical connector, a storage device, a connecting member and a first fixing member. A first side of the base has a first fixing portion. The first electrical connector is disposed at a second side of the base, wherein the second side is opposite to the first side. The storage device has a second electrical connector. The connecting member is connected to the storage device. The first fixing member is disposed on the connecting member. The second electrical connector is connected to the first electrical connector and the first fixing member is fixed to the first fixing portion, so as to fix the storage device on the base.

Abstract: A server includes a chassis and a storage module. The storage module is disposed in the chassis. The storage module includes a base, a first electrical connector, a storage device, a connecting member and a first fixing member. A first side of the base has a first fixing portion. The first electrical connector is disposed at a second side of the base, wherein the second side is opposite to the first side. The storage device has a second electrical connector. The connecting member is connected to the storage device. The first fixing member is disposed on the connecting member. The second electrical connector is connected to the first electrical connector and the first fixing member is fixed to the first fixing portion, so as to fix the storage device on the base.

Abstract: A power supply device communicable with a system and a method for supplying power to a system through a switch thereof are disclosed. The power supply device includes a switch, a microcontroller unit and a control circuit, and supplies power to the system through the switch. The microcontroller unit provides a first operating voltage to the switch through a first pin, and performs a firmware update procedure when the power supply device communicates with the system. The control circuit is coupled to the switch, and transmits a second operating voltage to the switch. When the microcontroller unit performs the firmware update procedure, the control circuit turns on the switch at least according to the second operating voltage, so that the power supply device does not stop supplying power to the system.

Abstract: A power supply device communicable with a system and a method for supplying power to a system through a switch thereof are disclosed. The power supply device includes a switch, a microcontroller unit and a control circuit, and supplies power to the system through the switch. The microcontroller unit provides a first operating voltage to the switch through a first pin, and performs a firmware update procedure when the power supply device communicates with the system. The control circuit is coupled to the switch, and transmits a second operating voltage to the switch. When the microcontroller unit performs the firmware update procedure, the control circuit turns on the switch at least according to the second operating voltage, so that the power supply device does not stop supplying power to the system.

Abstract: A method of controlling charging includes: receiving an input voltage; receiving by a control unit a detected voltage related to the input voltage; outputting a conducting voltage from the control unit when the detected voltage falls within an operation range; outputting an operating voltage to a detection pin of a charging unit according to the conducting voltage; outputting a charging current from the charging unit according to the input voltage when the detection pin receives the operating voltage; and not outputting the conducting voltage from the control unit when the detected voltage falls outside the operation range.

Abstract: A method of controlling charging includes: receiving an input voltage; receiving by a control unit a detected voltage related to the input voltage; outputting a conducting voltage from the control unit when the detected voltage falls within an operation range; outputting an operating voltage to a detection pin of a charging unit according to the conducting voltage; outputting a charging current from the charging unit according to the input voltage when the detection pin receives the operating voltage; and not outputting the conducting voltage from the control unit when the detected voltage falls outside the operation range.

Abstract: Embodiments of the present invention provide an electrostatic discharge protection circuit connected in series between a protection target and an external circuit. The electrostatic discharge protection circuit includes an N-type field-effect transistor and a diode. The N-type field-effect transistor has a drain coupled to an input pin of the protection target, a source coupled to a ground voltage, and a gate coupled to the external circuit. The diode has an anode coupled to the ground voltage, and a cathode together with the gate of the N-type field-effect transistor coupled to the external circuit.