Patents by Inventor Shih I Liu

Shih I Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Via connection to a partially filled trench
    Patent number: 11929258
    Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: March 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Ming Chang, Chih-Ming Lai, Ru-Gun Liu, Tsai-Sheng Gau, Chung-Ju Lee, Tien-I Bao, Shau-Lin Shue
  • Biosensor containing ruthenium, measurement using the same and the application thereof
    Patent number: 8062488
    Abstract: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: November 22, 2011
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Shih-I Liu
  • Biosensor containing ruthenium, measurement using the same and application thereof
    Patent number: 7754056
    Abstract: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.
    Type: Grant
    Filed: June 9, 2006
    Date of Patent: July 13, 2010
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Shih-I Liu
  • BIOSENSOR CONTAINING RUTHENIUM, MEASUREMENT USING THE SAME AND THE APPLICATION THEREOF
    Publication number: 20090283805
    Abstract: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.
    Type: Application
    Filed: July 23, 2009
    Publication date: November 19, 2009
    Applicant: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Chuan Chou, Shih-I Liu
  • Biosensor containing ruthenium, measurement using the same and application thereof
    Publication number: 20070095664
    Abstract: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.
    Type: Application
    Filed: June 9, 2006
    Publication date: May 3, 2007
    Applicant: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Chuan Chou, Shih-I Liu
  • ISFETs fabrication method
    Patent number: 7067343
    Abstract: Methods for fabricating ion sensitive field effect transistors (ISFETs) with SnO2 extended gates. A SnO2 detection film is formed on a substrate by sol-gel technology to serve as an extended gate. The SnO2 detection film is electrically connected to a conductive wire, and an insulating layer is formed on the surface of the ISFET but part of the SnO2 detection film and the conductive wire are left exposed. The exposed conductive wire is electrically connected to a gate terminal of a MOS transistor.
    Type: Grant
    Filed: December 7, 2004
    Date of Patent: June 27, 2006
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Zhi Jie Chen, Shih I Liu